| PART |
Description |
Maker |
| 2SD526 2SD526R 2SD526Y |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-220AB POWER TRANSISTORS(4A/80V/30W) POWER TRANSISTORS(4A,80V,30W)
|
MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|
| CDSH3-4448C CDSH3-4448A CDSH3-4448S-G CDSH3-4448-G |
Switching Diodes Array, V-RRM=80V, V-R=80V, P-D=150mW, I-F=250mA SMD Switching Diodes
|
Comchip Technology
|
| CDST226-G12 CDST226-G |
Switching Diodes Array, V<sub>RRM</sub>=80V, V<sub>R</sub>=80V, P<sub>D</sub>=150mW, I<sub>F</sub>=100mA SMD Switching Diode
|
Comchip Technology
|
| HUF75542S3S HUF75542P3 FN4845 HUF75542S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 75A条(丁)|263AB 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 80 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 75A/ 80V/ 0.014 Ohm/ N-Channel/ UltraFET Power MOSFETs 75A 80V 0.014 Ohm N-Channel UltraFET Power MOSFETs From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
| FQB17N08L FQI17N08L FQB17N08LTM FQI17N08LTU |
80V N-Channel Logic Level QFET 80V LOGIC N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI9N08L FQB9N08L FQB9N08LTM FQI9N08LTU |
80V LOGIC N-Channel MOSFET 9.3 A, 80 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 80V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor] http://
|
| FDD3580 |
80V N-Channel PowerTrench MOSFET 80V N-Channel PowerTrench MOSFET From old datasheet system 80V N-Channel PowerTrench?/a> MOSFET
|
Fairchild Semiconductor
|
| FQU9N08 FQD9N08 FQD9N08TM |
80V N-Channel MOSFET 80V N-Channel QFET
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
| HIP4086AABZ HIP4086ABZ HIP4086ABZT |
80V, 500mA, 3-Phase MOSFET Driver 1.25A peak turn-off current 80V/0.5A Peak Three Phase Driver; Temperature Range: -25°C to 85°C; Package: 24-SOIC T&R 1.1 A HALF BRDG BASED MOSFET DRIVER, PDSO24
|
Intersil Corporation
|
| LT4250L LT4250H |
-20V to -80V, SO-8, Active Low Power Good -20V to -80V, SO-8, Active High Power Good
|
Linear
|
| G8941 G8941-01 G8941-02 G8941-03 |
Aluminum Snap-In Capacitor; Capacitance: 6800uF; Voltage: 80V; Case Size: 35x45 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 5600uF; Voltage: 80V; Case Size: 35x40 mm; Packaging: Bulk InGaAs PIN photodiode
|
Hamamatsu Photonics HAMAMATSU[Hamamatsu Corporation]
|