| PART |
Description |
Maker |
| MCH6613 |
Power MOSFET 30V, 0.35A, 3.7Ohm,-30V, -0.2A, 10.4Ohm, Complementary Dual MCPH6
|
ON Semiconductor
|
| RJK03M4DPA-00-J5A RJK03M4DPA-15 |
30V, 35A, 4.6mΩmax.N Channel Power MOS FET
30V, 35A, 4.6mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| SI4435DY SI4435DYTR |
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=-30V Rds(on)=0.020ohm
Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm
Power MOSFET(Vdss=-30V/ Rds(on)=0.020ohm
SHROUD, PRIVACY; RoHS Compliant: Yes
|
IRF[International Rectifier]
|
| RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| IRF7303 IRF7303TR |
Generation V Technology
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)
|
International Rectifier
http://
|
| IRF9953 IRF9953TR |
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=-30V/ Rds(on)=0.25ohm)
|
International Rectifier
|
| IRFF310 FN1888 |
1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET
From old datasheet system
1.35A 400V 3.600 Ohm N-Channel Power MOSFET
1.35A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| IRF7416 IRFB7416 IRF7416TR |
Power MOSFET(Vdss=-30V/ Rds(on)=0.02ohm)
Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm)
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| PST593DM PST592C PST592CM PST591JM PST591H PST591H |
30V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7901D1 with Lead Free Packaging
30V Dual N-Channel HEXFET Power MOSFET in a TSSOP-8 package; A IRF7752 with Standard Packaging
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7301 with Lead Free Packaging
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7303 with Lead Free Packaging
200V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package.; A IRFI4020H-117P with Standard Packaging 电压检测器
Voltage Detector 电压检测器
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF9956 with Standard Packaging 电压检测器
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF9952 with Lead Free Packaging 电压检测器
|
NXP Semiconductors N.V.
Intersil, Corp.
|
| STB160NF03L 7460 |
N-CHANNEL 30V 0.0021 OHM - 160A D2PAK STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFET POWER MOSFET
N-CHANNEL 30V 0.0021 OHM - 160A D2PAK STRIPFET POWER MOSFET
From old datasheet system
N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFET⑩ POWER MOSFET
N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFETPOWER MOSFET N沟道30V 0.0021ohm - 160A章采用D2PAK STripFET⑩功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F370 |
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF3703 IRF3703PBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
|
International Rectifier
|
