| PART |
Description |
Maker |
| IDT70824S_L IDT70824S45PFI IDT70824L IDT70824L20G |
4K x 16 SARAMTM (Sequential Access / Random Access Memory)
HIGH SPEED 64K (4K X 16 BIT) SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?)
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)
|
IDT[Integrated Device Technology]
|
| IDT70824S IDT70824S20GB IDT70824S20GI IDT70824S25G |
TRANS NPN W/RES 80 HFE SMINI-3 4K X 16 STANDARD SRAM, 45 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 4K X 16 STANDARD SRAM, 25 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 高K的16顺序访问随机存取存储器（单存取RAM⑩）
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
|
SRAM
Integrated Device Technology, Inc.
|
| LUCL9310GP-DT L9310 LUCL9310AP-D LUCL9310AP-DT LUC |
Line Interface and Line Access Circuit Full-Feature SLIC,Ringing Relay,and Test Access Device
|
AGERE[Agere Systems]
|
| MAX11167ETCT MX7672KP10T MX7672LP10T MX7572LCWG05- |
16-Bit, 500ksps/250ksps, ±5V SAR ADCs with Internal Reference in TDFN
High-Speed 12-Bit ADC with External Reference Input 2-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PQCC28
Complete High-Speed CMOS, 12-Bit ADC 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO24
CMOS, µP Compatible, 4µs, 8-Bit ADC 1-CH 8-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO18
CMOS, 1.3µs, 8-Bit ADC with Voltage Reference and Track/Hold 1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, PDSO20
8-CH 16-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO24
|
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| MH88437-P |
Data Access Arrangement Advance Information
Data Access Arrangement(数据存取阵列（在音频或数据传送设备和电话线之间提供一个完全接口）)
|
Mitel Networks Corporat...
Mitel Networks Corporation
|
| WE256K8-150CC WE256K8-150CCA WE256K8-150CM WE256K8 |
Access time:150 ns; 512K x 8 CMOS EEPROM module
Access time:200 ns; 512K x 8 CMOS EEPROM module
Access time:250 ns; 512K x 8 CMOS EEPROM module
Access time:300 ns; 512K x 8 CMOS EEPROM module
|
White Electronic Designs
|
| ULS-2821R ULS-2803H ULS-2823H ULS-2822 ULS-2815H U |
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:128MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 高电压，大电流达林顿阵列
50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Allegro MicroSystems, Inc.
|
| CS5012A-KP12 CS5012A-BP12 CS5012-BD7 CS5016-SE16B |
1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL/PARALLEL ACCESS, PDIP40 PLASTIC, DIP-40
1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL/PARALLEL ACCESS, CDIP40
1-CH 16-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL/PARALLEL ACCESS, CQCC44
|
Cirrus Logic, Inc.
CIRRUS LOGIC INC
|
| AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
| WE512K16-XG4X WE512K16-140G4C WE512K16-140G4CA WE5 |
Access time:200 ns; 5V power supply; 512K x 16 CMOS EEPROM module
Access time:20150 ns; 5V power supply; 512K x 16 CMOS EEPROM module
Access time:150 ns; 5V power supply; 512K x 16 CMOS EEPROM module
Access time:140 ns; 5V power supply; 512K x 16 CMOS EEPROM module
EEPROM MCP
|
White Electronic Designs
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
