| PART |
Description |
Maker |
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
|
| MMFT2N25E |
High Energy Power FET
|
ON Semiconductor
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| RJK0391DPA RJK0391DPA-00-J5A RJK0391DPA-13 RJK0391 |
N Channel Power MOS FET High Speed Power Switching
30V, 50A, 2.9m?max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| ADE7768AR-REF ADE7768ARZ-RL ADE7768AR-RL |
Energy Metering IC with Integrated Oscillator and Positive Power Accumulation 电能计量IC整合的振荡器和积累的积极力量
Energy Metering IC with Integrated Oscillator and Positive Power Accumulation 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16
|
Analog Devices, Inc.
|
| FX6ASJ-03-T13 FX6ASJ-03 |
Transistors>Switching/MOSFETs
High-Speed Switching Use Pch Power MOS FET 高速开关使用沟道功率MOS FET
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| 2N6324 2N6322 |
30 AMP NPN HIGH VOLTAGE / HIGH ENERGY 200 VOLTS
|
SSDI[Solid States Devices, Inc]
|
| UT50 UT100 UT20 |
Ultra Voltage, High Frequncy Pulse, R&R-c Tank, High Energy.
|
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