| PART |
Description |
Maker |
| GS8330LW72C-200 GS8330LW36C-250I GS8330LW36C-200 G |
36Mb x1Lp CMOS I/O Late Write SigmaRAM 512K X 72 LATE-WRITE SRAM, 2.1 ns, PBGA209
36Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI Technology, Inc.
|
| 24C04A |
The 24C04A is a 4K bit Serial Electrically Erasable PROM. The 24C04A features an I2C™ compatible 2-wire serial interface bus and hardware write protection for the upper half of the block. The 24C04A has a page write capabil
|
Microchip
|
| CS-514-4DW24 CS-514-2DW18 CS-514-6DW28 CS-514-6FN2 |
4-Channel Disk/Tape Read/Write Circuit
6通道写电
4通道的磁磁带写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
6-Channel Read/Write Circuit
|
Glenair, Inc.
|
| VM118-4F VM118-2PO VM118-6P VM118-6PL VM118-6PO VM |
6-Channel Read/Write Circuit 6通道写电
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
Digital Data Communications GmbH
Stackpole Electronics, Inc.
|
| AT28BV64B-25TC AT28BV64B-20PC AT28BV64B-20JI AT28B |
64K (8K x 8) Battery-Voltage?/a> Parallel EEPROM with Page Write and Software Data Protection
64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection
From old datasheet system
64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 8K X 8 EEPROM 3V, 250 ns, PDSO28
64K (8K x 8) Battery-VoltageParallel EEPROM with Page Write and Software Data Protection 8K X 8 EEPROM 3V, 200 ns, PDSO28
|
ATMEL[ATMEL Corporation]
Atmel, Corp.
|
| BH6629BFS |
Magnetic Disk LSIs > FDD read/write amplifier
Read /Write amplifier for FDD
|
ROHM[Rohm]
|
| GS8170DW36C GS8170DW36C-200 GS8170DW36C-250 GS8170 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 2.25 ns, PBGA209
|
GSI Technology, Inc.
|
| GS8170DW36C-250 GS8170DW36C-250I GS8170DW36C-300 G |
250MHz 512K x 36 18MB double late write sigmaRAM SRAM
300MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 256K x 72 18MB double late write sigmaRAM SRAM
|
GSI Technology
|
| EM4095 EM4095HMSO16A |
Read / Write Analog Front End
Read/Write analog front end for 125kHz RFID Basestation
|
EM Microelectronic - MARIN SA
ETC
|
| VM712415SSL VM712815CPOL |
4-Channel Disk/Tape Read/Write Circuit
8-Channel Disk Read/Write Circuit 8通道磁盘写电
|
STMicroelectronics N.V.
|
| VM355430POL VM355630FSSL VM355430VSL |
4 CHANNEL READ WRITE AMPLIFIER CIRCUIT, PDSO20
6 CHANNEL READ WRITE AMPLIFIER CIRCUIT, PDSO24
|
VTC INC
|
