| PART |
Description |
Maker |
| 2SD1816S-TL-E 2SD1816S-H 2SD1816S-E 2SD1816S-TL-H |
Bipolar Transistor
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
| UPC1406HA |
IC,ATTENUATOR,BIPOLAR,SIP,9PIN,PLASTIC
DUAL ATTENUATOR(BIPOLAR ANALOG INTERGRATED CIRCUIT
|
NEC Electronics Corp
|
| MSA-3111 MSA-3111-TR1 MSA-3135 MSA-3185 MSA-3186 M |
0 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
(MSA-31xx) Cascadable Silicon Bipolar MMIC Amplifier
Silicon Bipolar RFIC Amplifiers 硅双极射频放大器
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| IRG4PC50S IRG4PC50SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A)
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| 82S131 N82S131A N82S130N N82S131N N82S130A N82S131 |
V(cc): 7.0V; 2K-bit TTL bipolar PROM. For phototyping / volume production, sequential controllers, microprogramming, hardwired algorithms, control store, random logic, code conversion
2K-bit TTL bipolar PROM 512 X 4 OTPROM, 50 ns, PDIP16
|
List of Unclassifed Manufacturers
Philips Semiconductors
ETC
Electronic Theatre Controls, Inc.
NXP Semiconductors N.V.
|
| WP-MK-X2011-868 RS-MK-X2010 WP-MK-X2010-434 WP-MK- |
MOSFET DUAL N-CHAN 20V SOT-26
TRANS NPN BIPOLAR 300MW SOT26
TRANS PNP BIPOLAR 300MW SOT26
TRANSISTOR NPN 40V SOT363
High Integrity FM Transceiver
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Round Solutions
|
| 2SC4015 2SC3415S 2SC4061K |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
ROHM
|
| TLE4945 TLE4945-2L TLE4945L TLE4905 TLE4905L TLE49 |
Uni- and Bipolar Hall IC Switches for Magnetic Field Applications
Hall Sensors - Unipolar Hall IC switch (P-SSO-3-2 package)
Hall Sensors - Bipolar Hall IC switch (P-SSO-3-2 package)
Hall Sensors - Bipolar Hall IC latch (P-SSO-3-2 package)
Bipolar Hall IC Switches for Magnetic Field Applications(用于磁场应用的双极霍尔芯片开
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| TA31142FN TA31142F |
IF AMPLIFIER,BIPOLAR,SSOP,20PIN,PLASTIC
IF AMPLIFIER,BIPOLAR,SOP,20PIN,PLASTIC
From old datasheet system
|
Toshiba America Electronic Components, Inc.
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| ESM1602B ESM1602BFP |
VOLT COMPARATOR,QUAD,BIPOLAR,DIP,14PIN,PLASTIC
VOLT COMPARATOR,QUAD,BIPOLAR,SOP,16PIN,PLASTIC
From old datasheet system
|
ST Microelectronics
|
