| PART |
Description |
Maker |
| 2SD1664 2SD1858 A5800362 2SD1664P 2SD1664T100Q 2SD |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
Medium Power Transistor (32V/ 1A)
Medium Power Transistor (32V, 1A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Littelfuse
Rohm CO.,LTD.
ROHM[Rohm]
|
| M4A5 M1P5 M1P1 M2G9 M5D1 M5M1 M1F9 M1B5 M5B5 M7P9 |
MEDIUM CURRENT SILICON RECTIFIERS
(M2Kx) MEDIUM CURRENT SILICON RECTIFIERS
Header, Breakaway Vertical; Number of Contacts:2; Pitch Spacing:2.54mm; Number of Rows:1; Gender:Header; Series:42375; Body Material:PA Polyamide
KK 100 Hdr Assy Bkwy 30 Ckt Tin
MEDIUM CURRENT SILICON RECTIFIERS 中型电流硅整
|
List of Unclassifed Manufac...
EDAL
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
List of Unclassifed Man...
|
| BCX52-10 BCX52-16 BCP52-16 BCP52-10 BC52PA |
60 V, 1 A PNP medium power transistors
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
|
NXP Semiconductors
|
| 5082-2351 50822351 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
|
| SF25JZ51 SF25GZ51 F25JZ51 |
SF25JZ51
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
MEDIUM POWER CONTROL APPLICATIONS 中功率控制中的应
|
TOSHIBA[Toshiba Semiconductor]
|
| FZT689 FZT689B |
SOT223 NPN SILICON PLANAR MEDIUM
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| 2SD882S-X-AA3-R 2SD882S-X-AB3-R 2SD882S-X-T92-B 2S |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MEDIUM POWER LOW VOLTAGE TRANSISTOR 中功率低电压晶体
|
??『绉???′唤??????
UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| CR12CM-12A CR12CM-12A-A8 CR12CM-12A-13 CR12CM-12A- |
Thyristor Medium Power Use
600V - 12A - Thyristor Medium Power Use
|
Renesas Electronics Corporation
|
| LMA443 |
31GHz Medium Power Amplifier
31 GHz Medium Power Amplifier
|
FILTRONIC[Filtronic Compound Semiconductors]
|
