| PART |
Description |
Maker |
| 1212691 |
Replacement die - CF 500/DIE RCI 6-1
|
PHOENIX CONTACT
|
| AM29BL802C_03 AM29BL802C AM29BL802CB80DGE1 AM29BL8 |
Am29BL802C (Known Good Die Supplement)
8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1
|
Advanced Micro Devices
SPANSION[SPANSION]
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| SIDC03D30SIC2SAWN SIDC03D30SIC2UNSAWN |
Diodes - HV Chips - 300V, 10A die sawn
Diodes - HV Chips - 300V, 10A die unsawn
|
Infineon
|
| X76F128HG-2.7 X76F128HE-2.7 X76F128HEG-2.7 |
16K X 8 FLASH 2.7V PROM, UUC ROHS COMPLIANT, DIE
16K X 8 FLASH 2.7V PROM, UUC DIE
|
IC MICROSYSTEMS Sdn. Bhd.
|
| IXFK44N50F IXFX44N50F |
HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die 44 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
FILM/M CAPACITANCE=4.7 VOLT=100
HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die
|
IXYS, Corp.
ETC[ETC]
IXYS[IXYS Corporation]
|
| 001140-2193 0011-40-2193 |
Terminator Die
|
Molex Electronics Ltd.
|
| T8303E 0011-40-2225 11402225 0011402225 |
Terminator Die
|
Molex Electronics Ltd.
|
| CRIMPFOX-MT-2 |
Four different die stations
|
PHOENIX CONTACT
|
| 11-40-2064 1140-2064 0011-40-2064 |
Terminator Die
|
Molex Electronics Ltd.
|
| 11-40-2015 1140-2015 0011-40-2015 001140-2015 |
Terminator Die
|
Molex Electronics Ltd.
|
| S1-1000-50 |
RECTIFIER DIE
|
Sussex Semiconductor, Inc.
|
