| PART |
Description |
Maker |
| AD600AR-REEL AD600AR-REEL7 AD600JR-REEL AD600JR-RE |
Gain range:0 to 40dB ; -7.5V; 600mW; daual, low noise, wideband variable gain amplifier. For ultrasound and sonar time-gain control, high performance audio and RF AGC systems and signal measurement
|
Analog Devices
|
| MAX2057ETXD MAX2057ETXTD |
1700MHz to 2500MHz Variable-Gain Amplifier with Analog Gain Control
|
Maxim Integrated Products
|
| PE9887-11 |
Broadband Gain Horn Antenna Operating From 1 GHz to 18 GHz With a Nominal 0 dB Gain With SMA Female Input Connector
|
Pasternack Enterprises,...
|
| EL4451 |
Wideband Variable-Gain Amplifier/ Gain of 2
|
Elantec Semiconductor
|
| MAAL-009120-001SMB MAAL-009120-TR1000 MAAL-009120- |
Miniature Broadband Gain Stage
|
M/A-COM Technology Solutions, Inc.
|
| CGY121B Q62702-G0071 CGY121 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Gain Control range over 50dB)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| AD603SQ/883B AD603 AD603SQ883B |
Low noise, 90 MHz variable-gain amplifier
Low Noise, 90 MHz Variable Gain Amplifier
Low Noise, Voltage-Controlled Amplifier For Use In RF And IF AGC Systems
|
Analog Devices, Inc.
|
| BFR181 Q62702-F1314 |
From old datasheet system
NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
|
SIEMENS[Siemens Semiconductor Group]
|
| HMC313 |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
Hittite Microwave Corporation
|
| CHA2294-99F_00 CHA2294 CHA2294-99F/00 |
35-40GHz Low Noise, Variable Gain Amplifier
35-40GHz Low Noise, Variable Gain Amplifier 35 - 40GHz的低噪声，可变增益放大器
|
United Monolithic Semic...
UMS[United Monolithic Semiconductors]
United Monolithic Semiconductors GmbH
|
| HMC6187LP4E |
VARIABLE GAIN AMPLIFIER
|
Hittite Microwave Corporation
|
