| PART |
Description |
Maker |
| GBPC25 GBPC GBPC35 GBPC2502A GBPC2502W GBPC2504W G |
SINGLE PHASE BRIDGE
Aluminum Polymer Radial Lead Capacitor; Capacitance: 820uF; Voltage: 6.3V; Case Size: 10x13 mm; Packaging: Bulk
400V Bridge in a GBPC-W package
800V Bridge in a GBPC-W package
400V Bridge in a GBPC-A package
600V Bridge in a GBPC-A package
800V Bridge in a GBPC-A package
1000V Bridge in a GBPC-A package
1200V Bridge in a GBPC-A package
1200V Bridge in a GBPC-W package
600V Bridge in a GBPC-W package
1000V Bridge in a GBPC-W package
|
IRF[International Rectifier]
|
| KBPC108 KBPC1005 KBPC101 KBPC102 KBPC104 KBPC106 K |
3A,6A single phase rectifier bridges
3 A Single Phase Rectifier Bridges(3A 单向整流器桥) 三单相整流桥3A条单向整流器桥）
6 A Single Phase Rectifier Bridges(6A 单向整流器桥)
1000V Bridge in a D-72 package
800V Bridge in a D-72 package
600V Bridge in a D-72 package
400V Bridge in a D-72 package
200V Bridge in a D-72 package
50V Bridge in a D-72 package
1000V Bridge in a D-46 package
600V Bridge in a D-46 package
400V Bridge in a D-46 package
200V Bridge in a D-46 package
100V Bridge in a D-46 package
50V Bridge in a D-46 package
800V Bridge in a D-46 package
6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
|
Vishay Siliconix
International Rectifier, Corp.
VISHAY SEMICONDUCTORS
|
| 1N4046 1N4049 1N4048 1N4045 1N4056 1N4044 1N4047 1 |
275 Amp Avg Power Silicon Rectifier Diodes 275安培平均电力硅整流二极管
275am Avg POWER SILICON RECTIFIER DIODES
100V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
150V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
200V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
250V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
300V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
400V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
500V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
600V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
700V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
800V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
900V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
1000V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| AM29CPL154H-25DC AM29CPL154H-25/BXA AM29CPL154H-25 |
User Programmable Special Function ASIC
200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package; A JANTX2N7219 with Standard Packaging
100V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package; A JANTX2N6788U with Standard Packaging
200V Single N-Channel Hi-Rel MOSFET in a TO-259AA package; A IRFI260 with Standard Packaging
800V Single N-Channel Hi-Rel MOSFET in a TO-204AA package; A IRFAE40 with Standard Packaging
-55V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package; A IRF5NJ5305 with Standard Packaging
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package; A IRFF9110 with Standard Packaging
400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRFN340 with Standard Packaging
1000V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRFNG50 with Standard Packaging
-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA package; A JANTXV2N7237 with Standard Packaging
-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA package; A JANS2N7237 with Standard Packaging
40V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRL7N1404 with Standard Packaging 用户可编程ASIC的特殊功
|
Advanced Micro Devices, Inc.
|
| M366S6453CTS-L1L/C1L M366S6453CTS-L7A/C7A M366S645 |
PC133/PC100 Unbuffered DIMM
2A Standard Fixed Output LDO Regulators with Shutdown Switch; Package: TO220FP-5; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500; PC133/PC100无缓冲DIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M25P40-VMP3G/X M25P40-VMN3P/X M25P40-VMN6TG/X M25P |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
2A Standard Fixed Output LDO Regulators with Shutdown Switch; Package: TO220FP-5; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500; 4兆位，低电压，串行闪存的50兆赫SPI总线接口内存
|
意法半导
STMicroelectronics N.V.
|
| 10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
1000V 1A Ultra-Fast Discrete Diode in a SMB package
100V 1A Ultra-Fast Discrete Diode in a SMB package
200V 1A Ultra-Fast Discrete Diode in a SMB package
400V 1A Ultra-Fast Discrete Diode in a SMB package
600V 1A Ultra-Fast Discrete Diode in a SMB package
800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors
International Rectifier, Corp.
IRF[International Rectifier]
|
| PL00130-WCG07-14 |
SMD LED 0603 Package Top View
Flat lens thin package 1.6 x 0.8 x 0.8mm
|
P-tec Corporation
|
| STW30NF20 STP30NF20 |
Package A free-form text description of the package type
|
ST Microelectronics
|
| SD1100C..LSERIES 2613 SD1100C04L SD1100C08L SD1100 |
3200V 910A Std. Recovery Diode in a DO-200AB (B-Puk)package
3000V 910A Std. Recovery Diode in a DO-200AB (B-Puk)package
2500V 910A Std. Recovery Diode in a DO-200AB (B-Puk)package
2000V 1170A Std. Recovery Diode in a DO-200AB (B-Puk)package
1600V 1170A Std. Recovery Diode in a DO-200AB (B-Puk)package
1200V 1170A Std. Recovery Diode in a DO-200AB (B-Puk)package
800V 1170A Std. Recovery Diode in a DO-200AB (B-Puk)package
400V 1170A Std. Recovery Diode in a DO-200AB (B-Puk)package
From old datasheet system
STANDARD RECOVERY DIODES
|
International Rectifier
|
| LPC1114JHN33 LPC1114FHI33 LPC1114FHN33 LPC1113FBD4 |
32kB flash, 8kB SRAM, HVQFN32 package
24kB flash, 8kB SRAM, LQFP48 package
32kB flash, 8kB SRAM, LQFP48 package
64kB flash, 8kB SRAM, LQFP48 package
16kB flash, 4kB SRAM, TSSOP20 package
32kB flash, 4kB SRAM, TSSOP28 package
16kB flash, 4kB SRAM, TSSOP28 package
8kB flash, 2kB SRAM, TSSOP20 package
64kB flash, 8kB SRAM, TFBGA48 package
32kB flash, 8kB SRAM, PLCC44 package
16kB flash, 4kB SRAM, SO20 package
24kB flash, 8kB SRAM, HVQFN32 package
|
NXP Semiconductors
|
