| PART |
Description |
Maker |
| BD241CFP |
Transient Surge Protection Thyristor; Package/Case:MS-013; Current, It av:2.2A; Reel Quantity:1500; Capacitance:80pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:200V; Holding Current:150mA 晶体管|晶体管|叩| 100V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
|
Samsung Semiconductor Co., Ltd.
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PP0640SA PP0640SB |
Thyristor, Thyristor, 58V Forward Blocking Voltage, 1A On-State Current, 150mA Holding Current, 1420A RMS Current
BIDIRECTIONAL THYRISTOR SURGE SUPPRESSOR
|
Protek Devices
|
| KPY32-RK Q62705-K266 |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Current, It av:6A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| X40030S14-A X40030S14-B X40031S14-A X40031S14-B X4 |
THYRISTOR/DIODE MODULE, 50A 1400VTHYRISTOR/DIODE MODULE, 50A 1400V; Voltage, Vrrm:1400V; Current, It av:50A; Case style:SEMIPACK 1; Current, It rms:95A; Current, Itsm:1500A; Voltage, Vgt:3V; Current, Igt:150mA; Centres, fixing:80mm;
Triple Voltage Monitor with Intergrated CPU Supervisor
|
Intersil Corporation
|
| BD535K BD536J BD534K BD538K BD538J BD534 BD537 |
50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE.
50.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE.
; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:20mA
; Package/Case:3-TO-218X; Current, It av:25A; Gate Trigger Current Max, Igt:80mA
Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A
; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes
|
Continental Device India Limited
|
| 1N974B 1N963B 1N965B 1N962B 1N970B 1N960B 1N968D 1 |
0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 30V. Test current 4.2mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 75V. Test current 1.7mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 39V. Test current 3.2mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. -20% tolerance.
0.5W SILICON ZENER DIODES
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 50μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
PC 4/ 5-ST-7,62 .5W硅稳压二极管
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 51V. Test current 2.5mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 47V. Test current 2.7mA. -10% tolerance.
|
JGD[Jinan Gude Electronic Device]
济南固锝电子器件有限公司
Jinan Gude Electronic Device Co., Ltd.
Semtech, Corp.
娴???洪??靛??ㄤ欢??????
Jinan Gude Electronic D...
|
| STK12C68-5S30 STK12C68-5W30 |
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:35mA
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| Z8916924VSC Z8916520VSC |
8-BIT MICROCONTROLLER
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:12A; Gate Trigger Current Max, Igt:50mA 8位微控制
|
ON Semiconductor
|
| BD437/D |
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:12A; Gate Trigger Current Max, Igt:50mA 塑料中功率硅NPN晶体
|
Crydom, Inc.
|
| 74AHCT259D 74AHC259D 74AHC259PW 74AHCT259PW HCT259 |
Zener Diode; Zener Voltage Typ, Vz:2.7V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:2.7V; Forward Current:200A; Leakage Current Max:100uA; Mounting Type:Through Hole 8位可寻址锁存
8-bit addressable latch
|
NXP Semiconductors N.V.
|
| XL6004 |
400KHz 60V 3A Switching Current Boost LED Constant Current Driver
|
XLSEMI
|
|
