| PART |
Description |
Maker |
| 2SC5585 |
Hig current. Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA
|
TY Semiconductor Co., Ltd
|
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
| 2SD1766 |
Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A).
|
TY Semiconductor Co., Ltd
|
| EN3025A 2SA1705 2SA170512 EN3025 |
Bipolar Transistor, -50V, -1A, Low VCE(sat), PNP Single NMP
Low-Frequency Power Amplifi er Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| 12A02CH12 EN7482A EN7482 |
Bipolar Transistor, -12V, -1A, Low VCE(sat) PNP Single CPH3
Low-Frequency General-Purpose Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| H11D3M |
IGBT; VCES (V): 400; Ic (A): 150; VGES (V): 6; Condition ICES at VCE=400V,VGE=0V (µA): 10; Condition IGES at VGE=VGES,VCE=0V (µA): ±10; Condition VGE (th) at VCE=10V,IC=1mA (V): 1.5; Package Code: PTSP0008JB-B (TTP-8DV)
|
Fairchild Semiconductor Corporation
|
| IXSM25N100 IXSM25N100A IXSH25N100A IXSH25N100 |
Low VCE(sat) High Speed IGBT(VCE(sat)涓?.0V??????缂??????烘?搴??)
Low VCE(sat) IGBT, High Speed IGBT
|
IXYS[IXYS Corporation]
|
| 2SC5585TL |
NPN Low VCE(sat) Transistor
|
ROHM
|
| TSB1424ACY TSB1424A TSB1424ACW |
Low Vce(sat) PNP Transistor
|
Taiwan Semiconductor Co...
TSC[Taiwan Semiconductor Company, Ltd]
|
| TSD1760CPS TSD1760 TSD1760CP TSD1760CPQ TSD1760CPR |
Low Vce(sat) NPN Transistor
|
TSC[Taiwan Semiconductor Company, Ltd]
|
| 2SD2702TL |
NPN Low VCE(sat) Transistor
|
ROHM
|
