| PART |
Description |
Maker |
| DR1P5-05D05 DR1P5-05D12 DR1P5-05D15 DR1P5-05S05 DR |
All specifications are typical at nominal input, full load and 25C otherwise noted
|
RSG Electronic Components GmbH
|
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HMC743ALP6CE |
RF Amplifier dig Variable-Gain
|
Hittite Microwave, Corp.
|
| Q62702-G0042 BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| KTS1C1S250 |
Typical RDS(on) (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode
|
TY Semiconductor Co., Ltd
|
| FMCE-0328 |
Attenuation to 60 db at 500 kHz, typical Operating temperature -55掳 to 125掳C
Attenuation to 60 db at 500 kHz, typical Operating temperature -55° to 125°C
|
Interpoint Corporation Company
|
| 2SK934 |
Drain Current ?ID=8A@ TC=25C
|
Inchange Semiconductor ...
|
| 2SK1460 |
Drain Current ?ID=3.5A@ TC=25C
|
Inchange Semiconductor ...
|
| 2SK1612 |
Drain Current ?ID=3A@ TC=25C
|
Inchange Semiconductor ...
|
| 08B1-1X1T-06-F |
ELECTRICAL CHRACTERISTICS 25C
|
Bel Fuse Inc.
|
