| PART |
Description |
Maker |
| BRCF016GWZ-3 BRCF016GWZ-3E2 |
WL-CSP EEPROM
|
ROHM
|
| BRCB064GWZ-3 |
WL-CSP EEPROM
|
ROHM
|
| M24128S-FCU |
128-Kbit serial I2C bus EEPROM 4 balls CSP
|
ST Microelectronics
|
| BU9897GUL-W11 |
High Reliability Series Serial EEPROMs WL-CSP EEPROM family I2C BUS
|
Rohm
|
| M6MGE13VW66CWG-P |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas
|
| M6MGB64BS8BWG M6MGT64BS8BWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas
|
| M6MGD13VW34DWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas
|
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
| K4M56163PE-RG K4M56163PE-R K4M56163PE-F90 K4M56163 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54
|
Samsung Semiconductor Co., Ltd.
Omron Electronics, LLC
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AT28C010E-12FM/883 AT28C010E-12EC AT28C010-12EM AT |
120NS, 32FLTPCK, 883C; LEV B COMPLIANT(EEPROM) 128K X 8 EEPROM 5V, 120 ns, CDFP32
128K X 8 EEPROM 5V, 120 ns, CQCC32
120NS, 32 LCC, MIL TEMP(EEPROM)
128K X 8 EEPROM 5V, 150 ns, CDFP32
128K X 8 EEPROM 5V, 200 ns, CDIP32
128K X 8 EEPROM 5V, 250 ns, CDIP32
|
Atmel, Corp.
ATMEL CORP
|
| 24CO25-SN 24CO25-ST 24CO25-IP 24CO25-ISN 24CO25-IS |
2K 2.5V I 2 C Serial EEPROM 2K 2.5VI 2荤⑩串行EEPROM
2K 2.5V IIC serial EEPROMs(2.5V~5.5V,2K10M次擦写周可寻址,EEPROM)
2K2.5VI2CSerialEEPROM
2K 2.5V I 2 C ?Serial EEPROM
2K 2.5V I2C EEPROM
|
Microchip Technology, Inc.
MicrochipTechnology
Microchip Technology Inc.
|
|
