| PART |
Description |
Maker |
| IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRGPC20F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)
|
IRF[International Rectifier]
|
| 15C01C 15C01C-TB-E |
Bipolar Transistor 15V, 0.7A, Low VCE(sat) NPN Single CP
|
ON Semiconductor
|
| IRGBC20M |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A)
|
IRF[International Rectifier]
|
| EN7504 |
Bipolar Transistor, 15V, 0.7A, Low VCE(sat) NPN Single CP
|
ON Semiconductor
|
| IRGPC20U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.5A)
|
IRF[International Rectifier]
|
| IRGPC20M |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A)
|
IRF[International Rectifier]
|
| IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 18A条一（c）|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| EN7643 |
Bipolar Transistor, 15V, 0.7A, Low VCE(sat) NPN Single MCPH6
|
ON Semiconductor
|
| IRGPF30F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A)
|
IRF[International Rectifier]
|
| IRGPC30S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=18A)
|
IRF[International Rectifier]
|
