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EN6387B - Bipolar Transistor -15V, -1.5A, Low VCE(sat), PNP Single MCPH6

EN6387B_8606017.PDF Datasheet


 Full text search : Bipolar Transistor -15V, -1.5A, Low VCE(sat), PNP Single MCPH6
 Product Description search : Bipolar Transistor -15V, -1.5A, Low VCE(sat), PNP Single MCPH6


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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=1.47V @Vge=15V Ic=33A)
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