| PART |
Description |
Maker |
| LT3651-4.1 LT3651IUHE-4.2PBF |
Monolithic 4A High Voltage Monolithic 4A High Voltage
BATTERY CHARGE CONTROLLER, 1100 kHz SWITCHING FREQ-MAX, PQCC36
|
LINEAR TECHNOLOGY CORP
|
| IXBT10N170 IXBH10N170 |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3064 |
High Voltage Monolithic IC
|
Renesas Technology
|
| ECN3061 |
High Voltage Monolithic IC
|
Renesas Technology
|
| ECN2112 |
(ECN2102 / ECN2112) HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
| TPD4113K07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4104AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| A2460 |
Monolithic High Voltage MOSFET and IGBT Driver
|
Alpha Microelectronics
|
| LT3512HMSPBF LT3512EMSPBF LT3512IMSPBF |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
| LT3512 |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
| IXBH15N160 IXBH15N140 |
From old datasheet system
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| IXBH9N140G IXBH9N160G |
Discrete IGBTs
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
