| PART |
Description |
Maker |
| PS2805C-4-V-F3 PS2805C-4-V-F3-A PS2805C-1-V-F3-A P |
HIGH ISOLATION VOL TAGE AC INPUT RESPONSE TYPE SSOP PHOTOCOUPLER
HIGH ISOLATION VOL TAGE AC INPUT RESPONSE TYPE SSOP PHOTOCOUPLER
|
California Eastern Labs
|
| BFR181W Q62702-F1491 |
NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
| BFP182W |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| BFP182R |
NPN Silicon RF Transistor
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| BFP182 |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFP183 |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| Q62702-F1189 BFQ82 |
NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
|
SIEMENS[Siemens Semiconductor Group]
|
| BFP181 Q62702-F1271 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| CD296KC |
EC Snap-In 105∑C Long Lifetime 5.000h High Ripple Currents(Snap-In)
|
JIANGHAI[Jianghai Europe GmbH]
|
| CD287GC |
EC Radial 105°C 4.000 - 10.000h Lifetime Low ESR at High Ripple Currents(Radial)
|
Jianghai Europe GmbH
|
| CD284XY |
EC Radial 105∑C 2.000 - 10.000h Lifetime Lowest ESR at High Ripple Currents(Radial)
|
Jianghai Europe GmbH
|
