| PART |
Description |
Maker |
| STF28N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| SSF2715 |
Extremely high dv/dt capability
|
Silikron Semiconductor Co.,LTD.
|
| STW65N65DM2AG |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| CZT2000 |
NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| FDG315N |
High performance trench technology for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2312 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| AP2121 AP2121AK-1.8TRE1 AP2121AK-3.0TRE1 AP2121AK- |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manuf...
BCD Semiconductor Manufacturing Limited
http://
|
| SI2301 |
High dense cell design for extremely low RDS(ON)
|
MAKO SEMICONDUCTOR CO.,...
|
| CES2303 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2305 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CMPTA96 |
SURFACE MOUNT PNP SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
