| PART |
Description |
Maker |
| ML7912 ML7702 ML7XX2 |
2 mA, laser diode for optical communication
MITSUBISHI LASER DIODES
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
http://
|
| ML7701A |
2 mA, laser diode for optical communication
|
Mitsubishi Electric Corporation
|
| ML6706N |
10 mA, laser diode for optical information system
|
Mitsubishi Electric Corporation
|
| ML9XX22 ML9SM11 ML9SM11-02 ML9SM11-03 ML9SM22 ML9S |
2.5Gbps DWDM InGaAsP DFB-LASER DIODE 高达2.5Gbps的DWDM激光器InGaAsP的激光二极管
1557 nm, LASER DIODE
1555 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NDL5003 |
1300NM OPTICAL FIBER COMMUNICATIONS INGAASP DOUBLE HETEROSTRUCTURE LASER DIODE
|
NEC Corp.
|
| NDL7672P NDL7672PC NDL7672PD |
1310 nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP MQW-DFB LASER DIODE MODULE
|
NEC
|
| NDL7620P00 NDL7620P NDL7620P2C NDL7620P2D NDL7620P |
1310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s
|
NEC
|
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX8369TS |
LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Labs
|
| NX6352GP27-AZ NX6352GP33-AZ NX6352GP29-AZ |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
| NX7537BF-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode
798 nm, LASER DIODE M-272, 12 PIN
|
SONY
NXP Semiconductors N.V.
|
