| PART |
Description |
Maker |
| K7M321825M K7M323625M K7N321801M-QC25 K7N323601M-Q |
1Mx36 & 2Mx18 Flow-Through NtRAM 1Mx36
1Mx36 & 2Mx18 Flow-Through NtRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7S3218T4C K7S3236T4C K7S3236T4C-FECI45 K7S3236T4C |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM 1Mx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7N321801M K7N323601M DSK7N323601M |
1Mx36 & 2Mx18-Bit Pipelined NtRAM
1Mx36 & 2Mx18-Bit Pipelined NtRAM 1Mx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7S3236T4C08 K7S3218T4C |
1Mx36 & 2Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
| K7R320982C K7R323682C-FEC30 K7R321882C K7R323682C |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
|
SAMSUNG[Samsung semiconductor]
|
| K7N323645MK7N321845M |
1Mx36 & 2Mx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| K7R323684MK7R321884MK7R320884M |
1Mx36 & 2Mx18 & 4Mx8 QDRII b4 SRAM Data Sheet
|
Samsung Electronic
|
| K7I323682M K7I321882M K7M161825A-QCI65 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
512Kx36 & 1Mx18 Pipelined NtRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS61DDPB22M18A IS61DDPB22M18A/A1/A2 IS61DDPB21M36A |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| IS61DDPB42M18A IS61DDPB42M18A/A1/A2 IS61DDPB41M36A |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7A323630C K7A321830C K7A321830C-PC20 K7A321830C-P |
1M X 36 CACHE SRAM, 3.1 ns, PQFP100
1Mx36 and 2Mx18 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
| XC1700E XC1701LPC20C XC1701LPC20I XC1701LPD8C XC17 |
Configuration PROM.
XC1700E and XC1700L Series Configuration PROMs
IC,EPROM,128KX1,CMOS,DIP,8PIN,PLASTIC
From old datasheet system
Configuration PROMs 4M X 1 CONFIGURATION MEMORY, PQFP44
Configuration PROMs 256K X 1 CONFIGURATION MEMORY, PQCC20
|
Xilinx Inc
XILINX[Xilinx, Inc]
Xilinx, Inc.
|
