| PART |
Description |
Maker |
| MWA02011L MWA0204 MWA0270 MWA0211L |
I(cc): 40mA; P(in): -16 dB; V(cc): 6V; monolithic microwave integrated circuit
MONOLITHIC MICROWAVE INTEGRATED CIRCUIT 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
(MWA02011L / MWA0204 / MWA0270) MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| CHR3663-QEG |
17-24GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD package
|
United Monolithic Semiconductors
|
| Q68000-A8615 CGY52 |
GaAs MMIC (Two stages monolithic microwave IC MMICAmplifier All gold metallisation) 砷化镓微波单片集成电路（两个阶段单片微波IC MMICAmplifier所有黄金metallisation
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TG2216TU |
RF SPDT Switch
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
Toshiba Corporation
|
| NGA-589 |
MICROWAVE/MILLIMETERWAVEAMPLIFIER|GAAS|TO-243|3PIN|PLASTIC
DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
|
Electronic Theatre Controls, Inc.
Sirenza Microdevices, Inc.
|
| GC9903 GC9914 GC9944 GC9942 GC9901 GC9921 GC9923 |
Microwave Monolithic Schottky
|
Microsemi
|
| S8851 |
MICROWAVE POWER GaAs FET
|
TOSHIBA[Toshiba Semiconductor]
|
| TPM2323-30 |
MICROWAVE POWER GaAs FET
|
TOSHIBA[Toshiba Semiconductor]
|
| TIM0910-10 |
MICROWAVE POWER GaAs FET
|
TOSHIBA[Toshiba Semiconductor]
|
| TIM7785-8SL |
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
|
| TIM6472-8UL |
MICROWAVE POWER GaAs FET
|
TOSHIBA[Toshiba Semiconductor]
|
