| PART |
Description |
Maker |
| LY62102516 |
1024K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek
|
| LY6210248GL-70LL LY6210248GL-70LLIT LY6210248ML-55 |
1024K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| AS6C8008 |
512K X 8 BIT LOW POWER 1024K X 8 BIT SUPER LOW POWER CMOS SRAM
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
|
| N16L163WC2CZ1-55IL N16L163WC2C N16L163WC2CT1 N16L1 |
16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K × 16 bit
16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| EN29LV800B70RSIP EN29LV800T70RSIP EN29LV800B70RS E |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 8兆位024K × 812k × 16位）闪存引导扇区闪存，CMOS 3.0伏，
122 x 32 pixel format, LED or EL Backlight available
|
Electronic Theatre Controls, Inc.
Eon Silicon Solution Inc.
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| EN29LV800A EN29LV800AB-55RBC EN29LV800AB-55RBCP EN |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc.
|
| EN29LV160JT70S EN29LV160JT70SI EN29LV160JT70SIP EN |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
ETC
|
| EN29SL800T-90TC EN29SL800T-90TCP EN29SL800T-90TI E |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8 Volt-only
|
Eon Silicon Solution Inc.
|
| EN29F800T90S EN29F800T90SI EN29F800T90T EN29F800T9 |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only
|
Eon Silicon Solution
|
