| PART |
Description |
Maker |
| 2N1651 2N1652 2N1653 |
DAP transistors are de-signed for efficient high current switching at high frequencies
|
New Jersey Semi-Conductor Products, Inc.
|
| AS8650B-ZQFM-01 AS8650B-ZQFP-01 |
High-efficient Power Management Device with High-speed CAN Interface
|
austriamicrosystems AG
|
| IPS511S IPS511 IPS511STRL |
Intelligent Power Switch 1 Channel High Side Driver in a D2-Pak 5-Lead Package
Intelligent Power Switch 1 Channel High Side Driver in a TO-220FL Package
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
|
IRF[International Rectifier]
|
| MC33988CHFK |
Dual Intelligent High-current Self-protected Silicon High Side Switch (8.0 mOhm)
|
Freescale Semiconductor, Inc
|
| BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
|
ON Semiconductor
|
| BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
|
ON Semiconductor
|
| HT11 |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| EGC20MH EGC20GH EGC20KH EGC20DH EGC20JH |
High Efficient Rectifier
|
Zowie Technology Corporation
|
| HER805G HER802G HER806G HER803G |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| HER107SG HER101SG HER106SG |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
