| PART |
Description |
Maker |
| 106415-2007 |
iPASS High Density AOC Assembly (iPass-to-iPass), Multimode, 50/125m, Cable Diameter 3.00mm, Cable Length 7.00m
|
Molex Electronics Ltd.
|
| SCFS12000 SCFS10000 SCFS2000 SCFS4000 SCFS6000 SCF |
1.5 A, 4000 V, SILICON, RECTIFIER DIODE
FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
High Voltage,High Density Fast Recovery Rectifier(反向电压4000V，温55℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压6000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压12000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压2000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压10000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(????靛?12000V锛?俯搴?5???骞冲??存??垫?1.5A,楂??锛??瀵?害锛?揩???澶??娴??)
|
Semtech Corporation
|
| ISPLSI2192VE-135LT128 ISPLSI2192VE-180-L-T128 ISPL |
3.3V In-System Programmable SuperFAST High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
RELAY SSR 110A 240VAC AC INPUT
3.3V In-System Programmable SuperFASTHigh Density PLD
|
LATTICE[Lattice Semiconductor]
LatticeSemiconductor
Lattice Semiconductor Corporation
|
| ISPLSI2096E-100LQ128 ISPLSI2096E-100LT128 ISPLSI20 |
In-SystemProgrammableSuperFASTHighDensityPLD
In-System Programmable SuperFAST?/a> High Density PLD
In-System Programmable SuperFAST High Density PLD
In-System Programmable SuperFAST⑩ High Density PLD
In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP128
In-System Programmable SuperFAST??High Density PLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
| 1024-60LH_883 ISPLSI1024-60LH_883 1024 1024-60LH/8 |
60 MHz in-system prommable high density PLD
In-System Programmable High Density PLD EE PLD, 25 ns, PQCC68
:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
http://
|
| HDSOLDERCUP HDVERTICAL 780-M26-113R051 780-MYY-113 |
MALE-HIGH DENSITY
MALE-HIGH DENSITY-MACHINED CONTACTS-VERTICAL
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6 |
High Voltage,High Current,High Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存???
5.5 A, 16000 V, SILICON, RECTIFIER DIODE
High Voltage,High Current,High Density Standard Recovery Rectifier(反向电压6000V，温5℃时平均整流电流5.5A,高压，大电流,高密度，标准恢复整流
STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER
|
Semtech Corporation
|
| ISPLSI5512VA-100LB272 ISPLSI5512VA-70LQ208 5512VA |
70 MHz in-system prommable 3.3V superWIDE high density PLD
In-System Programmable 3.3V SuperWIDE⑩ High Density PLD
In-System Programmable 3.3V SuperWIDE High Density PLD
110 MHz in-system prommable 3.3V superWIDE high density PLD
|
LATTICE[Lattice Semiconductor]
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| ISPLSI1032 ISPLSI1032-60LG_883 ISPLSI1032-80LJ ISP |
In-System Programmable High Density PLD EE PLD, 17 ns, PQCC84
High-Density Programmable Logic
|
Lattice Semiconductor, Corp.
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
|
| IDT72V2103L10PF IDT72V2113L10PFI IDT72V2113L7-5BCI |
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 128K X 18 OTHER FIFO, 10 ns, PQFP80
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 128K X 18 OTHER FIFO, 6.5 ns, PQFP80
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 3.3伏高密度SUPERSYNC二窄总线先进先出
Octal bus transceiver/register (3-State) - Description: Transceiver/Register (3-State) ; Fmax: 350 MHz; Logic switching levels: TTL ; Number of pins: 24 ; Output drive capability: -32/ 64 mA ; Propagation delay: 4.4 ns; Voltage: 4.5-5.5 V
|
Integrated Device Technology, Inc.
|
| ISPLSI5512VE-155LF256 ISPLSI5512VE-155LB272 ISPLSI |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns.
EE PLD, 10 ns, PBGA388
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns.
|
LATTICE SEMICONDUCTOR CORP
|
