| PART |
Description |
Maker |
| FDP14AN06LA0 FDP14AN06LA FDB14AN06LA0 |
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 61A, 0.014 Ohm, TO-220 Package
N-Channel PowerTrench MOSFET, 60V, 60A, 0.0146 Ohms @ VGS = 5V, TO-263/D2PAK Package
N-Channel PowerTrench MOSFET 60V/ 60A/ 14.6m
N-Channel PowerTrench MOSFET 60V, 60A, 14.6mз
|
FAIRCHILD[Fairchild Semiconductor]
|
| ZXMP6A13FTC ZXMP6A13F ZXMP6A13FTA |
P-channel MOSFET
60V P-CHANNEL ENHANCEMENT MODE MOSFET
MOSFET P-CH 60V 900MA SOT-23 900 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ZETEX[Zetex Semiconductors]
Electronic Theatre Controls, Inc.
Zetex Semiconductor PLC
|
| FDB10AN06A0 FDP10AN06A0 |
CAP 0.1UF 50V 5% X7R SMD-1206 TR-7-PA SN100
N-Channel PowerTrench MOSFET 60V/ 75A/ 10.5m
N-Channel PowerTrench MOSFET 60V, 75A, 10.5mз
N-Channel PowerTrench MOSFET 60V, 75A, 10.5mOhm
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
| FDI025N06 |
60V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench㈢ MOSFET 60V, 265A, 2.5mヘ
N-Channel PowerTrench? MOSFET 60V, 265A, 2.5mΩ
|
Fairchild Semiconductor
|
| FDP13AN06A FDP13AN06A0 FDB13AN06A0 FDB13AN06A0NL |
N-Channel PowerTrench MOSFET 60V, 62A, 13.5mohm
N-Channel PowerTrench MOSFET 60V/ 62A/ 13.5m
N-Channel PowerTrench MOSFET, 60V, 62A, 0.0135 Ohms 62 A, 60 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel PowerTrench MOSFET 60V, 62A, 13.5mз 62 A, 60 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| STD30NE06L 6044 STD30NE06LT4 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 30A条（丁）|52AA
N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| FQP17P06 FQP17P06J69Z |
17 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220
60V P-Channel MOSFET
60V N-Channel MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 30A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五（巴西）直| 30A条（丁）|的SOT - 186
|
Renesas Electronics, Corp.
NXP Semiconductors N.V.
|
| STB16NF06L STB16NF06L06 |
N-channel 60V - 0.07Ω - 16A - D2PAK STripFET Power MOSFET
N-channel 60V - 0.07楼? - 16A - D2PAK STripFET垄芒 Power MOSFET
N-channel 60V - 0.07ヘ - 16A - D2PAK STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| IRFF024 |
60V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
HEXFET?TRANSISTORS
60V, N-CHANNEL
|
IRF[International Rectifier]
|
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
