| PART |
Description |
Maker |
| HM5112805FLTD-6 HM5112805F-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
http://
Hitachi,Ltd.
|
| HM5112805LTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Renesas Technology / Hitachi Semiconductor
|
| KMM372F3200BK3 KMM372F3280BK3 KMM372F400CK KMM372F |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
|
Samsung Electronic
Samsung semiconductor
|
| KMM372C1600BK KMM372C1600BS KMM372C1680BK KMM372C1 |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
|
Samsung Electronic
Samsung semiconductor
|
| HM51W18165TT-7 HM51W16165J-5 HM51W18165LJ-7 HM51W1 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh 16米EDO公司的DRAM - Mword 16位）4亩刷 1亩刷
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh 16米EDO公司的DRAM1 - Mword 16位）4亩刷 1亩刷
|
Hitachi,Ltd.
|
| HM5117405LS-5 HM5117405LS-6 HM5117405LS-7 HM511740 |
16 M EDO DRAM (4-Mword 垄楼 4-bit) 4 k Refresh/2 k Refresh
16 M EDO DRAM (4-Mword ′ 4-bit) 4 k Refresh/2 k Refresh
|
Elpida Memory
|
| HM5118165J-5 HM5118165J-6 HM5118165J-7 HM5118165TT |
16 M EDO DRAM (1-Mword x 16-bit) 1 k Refresh
1M X 16 EDO DRAM, 70 ns, PDSO50
|
ELPIDA MEMORY INC
|
| KMM5328100CK KMM5328100CKG KMM5328000CKG KMM532800 |
8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
8M x 8 Bit 4k EDO DRAM
8M x 8 Bit 8k EDO DRAM
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HM5118165LJ-5 HM5118165LJ-7 HM5118165TT-7 HM511816 |
16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh
1M X 16 EDO DRAM, 50 ns, PDSO44
1M X 16 EDO DRAM, 60 ns, PDSO44
|
Hitachi,Ltd.
|
| KMM372C410CK KMM372C400CS KMM372C410CS KMM372C400C |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
