| PART |
Description |
Maker |
| AS8ER128K32Q-250/XT AS8ER128K32Q-250/883C AS8ER128 |
128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY 128K X 32 EEPROM 5V MODULE, 250 ns, CQFP68
|
Austin Semiconductor, Inc
|
| AS8ER128K32 |
128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array
|
AUSTIN[Austin Semiconductor]
|
| IHB2EB1R0M IHB6BV6R8M IHB2BV121K IHB6BV123K IHB2BV |
General Fixed Inductor, 1 ELEMENT, 1 uH, GENERAL PURPOSE INDUCTOR, HALOGEN FREE AND ROHS COMPLIANT
General Fixed Inductor, IND,WIREWOUND,6.8UH,20% TOL,20% -TOL
General Fixed Inductor, IND,WIREWOUND,120UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,12MH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,8.2UH,20% TOL,20% -TOL
IND FLTR 33UH 20% 1KHZ 13.5A RDL - Bulk
General Fixed Inductor, IND,WIREWOUND,390UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,3.3UH,20% TOL,20% -TOL
General Fixed Inductor, IND,WIREWOUND,8.2MH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,820UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,1.2MH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,100UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,22UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,10MH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,18UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,150UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,1.5MH,10% TOL,10% -TOL
|
Vishay Dale
|
| SST29VE010-200-4I-EHE SST29VE010-200-4I-WHE SST29V |
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 2.7V PROM, 150 ns, PDSO32
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 EEPROM 3V, 150 ns, PDSO32
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 EEPROM 3V, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
|
| IMS05SH472J IMS05ST101K IMS05WDST101K40 IMS05RU680 |
General Fixed Inductor, IND,FERRITE,4.7MH,5% TOL,5% -TOL
General Fixed Inductor, IND,FERRITE,100UH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,68UH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,6.8MH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,1.2MH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,56UH,5% TOL,5% -TOL
General Fixed Inductor, 1 ELEMENT, 100 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED, ROHS COMPLIANT
General Fixed Inductor, IND,FERRITE,150UH,5% TOL,5% -TOL
General Fixed Inductor, IND,FERRITE,120UH,5% TOL,5% -TOL
General Fixed Inductor, IND,FERRITE,82UH,5% TOL,5% -TOL
General Fixed Inductor, IND,FERRITE,82UH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,560UH,5% TOL,5% -TOL
|
Vishay Dale
|
| BR93L66RFVM-WTR CAT28C64BGI-12T CAT25C32Y14I CAT25 |
EEPROM SRL 256X16 BIT
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
EEPROM (4kx8) 32K 2.5-6.0
EEPROM (4kx8) 32K 1.8-6.0
EEPROM (1024x8) 8K
EEPROM 256K X 8 200ns
EEPROM I2C BUS; 4.5 to 5.5V 16Kbit; -40 to 85 C
EEPROM (256x8) 2K 1.8-6.0
EEPROM (512x8) 4k 1.8-6.0
EEPROM 128K X 8 150ns
EEPROM (8kx8) 64K 1.8-6.0
EEPROM (2048x8)(1024x16)16K
EEPROM U 804-29EE0107CWH
EEPROM 64K X 8 70ns
EEPROM (256x8) 2K 2.5-6.0
EEPROM (8kx8) 64K 2.5-6.0
SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, SOIC
SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, TSSOP
EEPROM (384x8) 128k 16
EEPROM SPI 1KBIT
EEPROM SPI 4096X8 BIT
EEPROM SRL 64X16 BIT
EEPROM (256x8) (128x16) 2K
8-Kb I<sup>2</sup>C CMOS Serial EEPROM, SOIC
EEPROM (128x8) 1k 2.5-6.0
EEPROM (8kx8) 64K 5V 90ns
EEPROM (32kx8) 256K 5V 150
EEPROM (32kx8) 256K 5V 120
EEPROM 2kb 1.7-5.5V Ind I2C
EEPROM 512K-Bit CMOS PARA EEPROM
EEPROM (32kx8) 256K 3V 250
EEPROM 64K X 8 512K 5V 150
EEPROM 256K (32KX8)
|
Omron Electronics, LLC
Atmel, Corp.
MITSUMI ELECTRIC CO., LTD.
Intersil, Corp.
Cypress Semiconductor, Corp.
TE Connectivity, Ltd.
Silicon Storage Technology, Inc.
BCD Semiconductor Manufacturing, Ltd.
Belden, Inc.
Rohm Co., Ltd.
Bourns, Inc.
NXP Semiconductors N.V.
Lattice Semiconductor, Corp.
Rectron Semiconductor
SIEMENS AG
Maxim Integrated Products, Inc.
Rochester Electronics, LLC
RF Solutions, Ltd.
Fujitsu, Ltd.
|
| MX26C1000APC-90 MX26C1000ATC-10 MX26C1000AMC-10 MX |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 90 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 100 ns, PDSO32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 70 ns, PQCC32
128K X 8 EEPROM 12V, 150 ns, PDSO32
128K X 8 EEPROM 12V, 150 ns, PQCC32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| AS29F010 AS29F010-120LC AS29F010-120TC AS29F010-15 |
5V 128K x 8 CMOS FLASH EEPROM 128K X 8 FLASH 5V PROM, 120 ns, PDIP32
5V 128K x 8 CMOS FLASH EEPROM 128K X 8 FLASH 5V PROM, 120 ns, PQCC32
5V 128K x 8 CMOS FLASH EEPROM 128K X 8 FLASH 5V PROM, 150 ns, PQCC32
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| AS28C010CW-12 AS28C010CW-20 AS28C010CW-20_883C AS2 |
128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable
|
Austin Semiconductor
|
| WE128K32-XH1X WE128K32-XG2TX WE128K32NP-200H1Q WE1 |
EEPROM MCP
128K X 32 EEPROM 5V MODULE, 200 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 120 ns, CPGA66 1.075 x 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 150 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 140 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 250 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
|
Microsemi, Corp.
White Electronic Designs, Corp.
|
| SST29EE010-150-4C-EH SST29EE010-250-4C-NH SST29EE0 |
1 Mbit (128K x 8) page-mode EEPROM
From old datasheet system
1 Mbit (128K x8) Page-Mode EEPROM
|
SST[Silicon Storage Technology Inc]
SST[Silicon Storage Technology, Inc]
|
|
