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BCR3LM-12RBB00 - 600V - 3A - Triac Low Power Use

BCR3LM-12RBB00_8446122.PDF Datasheet


Part No.	BCR3LM-12RBB00 BCR3LM-12RB-15
Description	600V - 3A - Triac Low Power Use
File Size	96.83K / 8 Page
Maker	Renesas Electronics Corporation
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Full text search : 600V - 3A - Triac Low Power Use

Product Description search : 600V - 3A - Triac Low Power Use

Related Part Number

PART	Description	Maker
Q6004L4V Q6008L5V Q6015L5V Q6004L3V Q6010L5V Q5008	TRIAC\|600V V(DRM)\|4A I(T)RMS\|TO-220AB TRIAC\|600V V(DRM)\|8A I(T)RMS\|TO-220AB TRIAC\|600V V(DRM)\|15A I(T)RMS\|TO-220AB TRIAC\|600V V(DRM)\|10A I(T)RMS\|TO-220AB TRIAC\|500V V(DRM)\|8A I(T)RMS\|TO-220AB 可控硅\| 500V五（DRM）的\| 8A条口（T）的有效值\| TO - 220AB现有 TRIAC\|800V V(DRM)\|8A I(T)RMS\|TO-220AB 可控硅\| 800V的五（DRM）的\| 8A条口T）的有效值\| TO - 220AB现有 TRIAC\|400V V(DRM)\|4A I(T)RMS\|TO-220AB 可控硅\| 400V五（DRM）的\| 4A条口（T）的有效值\| TO - 220AB现有	Teridian Semiconductor, Corp. Littelfuse, Inc.
Q6025G Q6025J6 Q6025K6 Q6025L5 Q6025L6 Q6025L9ALT	TRIAC\|600V V(DRM)\|40A I(T)RMS\|TO-208AA TRIAC\|600V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 12A条口（T）的有效值\|20 TRIAC\|200V V(DRM)\|40A I(T)RMS\|TO-218 可控硅\| 200伏五（DRM）的\| 40A条口（T）的有效值\|18 TRIAC\|600V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 12A条口T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 200伏五（DRM）的\| 5A条口（T）的有效值\|20 TRIAC\|600V V(DRM)\|15A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 15A条口（T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 400V五（DRM）的\| 25A条口（T）的有效值\|20 TRIAC\|600V V(DRM)\|4A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 4A条口（T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 800V的五（DRM）的\| 12A条口（T）的有效值\|20 TRIAC\|500V V(DRM)\|4A I(T)RMS\|TO-220 可控硅\| 500V五（DRM）的\| 4A条口T）的有效值\|20 TRIAC\|400V V(DRM)\|3A I(T)RMS\|TO-202 可控硅\| 400V五（DRM）的\| 3A条口（T）的有效值\|02 TRIAC\|400V V(DRM)\|4A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 4A条口（T）的有效值\|20 TRIAC\|200V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 200伏五（DRM）的\| 12A条口（T）的有效值\|20 TRIAC\|400V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 12A条口（T）的有效值\|20 TRIAC\|400V V(DRM)\|40A I(T)RMS\|TO-218 可控硅\| 400V五（DRM）的\| 40A条口（T）的有效值\|18 TRIAC\|400V V(DRM)\|10A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 10A条口（T）的有效值\|20 TRIAC\|600V V(DRM)\|40A I(T)RMS\|TO-218 可控硅\| 600V的五（DRM）的\| 40A条口（T）的有效值\|18 TRIAC\|800V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 800V的五（DRM）的\| 12A条口（T）的有效值\|20 THYRISTOR MODULE\|TRIAC 晶闸管模块\|可控 TRIAC\|800V V(DRM)\|15A I(T)RMS\|TO-220 可控硅\| 800V的五（DRM）的\| 15A条口（T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 200伏五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|400V V(DRM)\|4A I(T)RMS\|TO-202 可控硅\| 400V五（DRM）的\| 4A条口（T）的有效值\|02 Transient Voltage Suppressor Diodes 可控硅\| 400V五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|600V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|200V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 200伏五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|400V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 8A条口（T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 700V的五（DRM）的\| 25A条口（T）的有效值\|20 可控硅\| 200伏五（DRM）的\| 10A条口（T）的有效值\|20 TRIAC\|300V V(DRM)\|6A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|25A I(T)RMS\|TO-39 TRIAC\|600V V(DRM)\|8A I(T)RMS\|TO-202 TRIAC\|500V V(DRM)\|8A I(T)RMS\|TO-202 TRIAC\|200V V(DRM)\|3A I(T)RMS\|TO-202 TRIAC\|500V V(DRM)\|25A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|8A I(T)RMS\|TO-202 TRIAC\|600V V(DRM)\|3A I(T)RMS\|TO-220 TRIAC\|400V V(DRM)\|8A I(T)RMS\|TO-202 TRIAC\|800V V(DRM)\|16A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|25A I(T)RMS\|PRESS-13 TRIAC\|500V V(DRM)\|15A I(T)RMS\|TO-3 TRIAC\|500V V(DRM)\|40A I(T)RMS\|TO-218VAR TRIAC\|200V V(DRM)\|10A I(T)RMS\|TO-203AA TRIAC\|200V V(DRM)\|15A I(T)RMS\|TO-208AA TRIAC\|400V V(DRM)\|10A I(T)RMS\|TO-203AA TRIAC\|400V V(DRM)\|10A I(T)RMS\|FBASE-R-HW30 TRIAC\|600V V(DRM)\|10A I(T)RMS\|FBASE-R-HW30 TRIAC\|200V V(DRM)\|10A I(T)RMS\|FBASE-R-HW30 TRIAC\|200V V(DRM)\|10A I(T)RMS\|TO-208AA TRIAC\|600V V(DRM)\|10A I(T)RMS\|TO-203AA TRIAC\|200V V(DRM)\|20A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|6A I(T)RMS\|TO-220 TRIAC\|500V V(DRM)\|25A I(T)RMS\|TO-218VAR TRIAC\|600V V(DRM)\|25A I(T)RMS\|TO-218VAR TRIAC\|400V V(DRM)\|25A I(T)RMS\|TO-218VAR TRIAC\|400V V(DRM)\|40A I(T)RMS\|TO-218VAR TRIAC\|200V V(DRM)\|40A I(T)RMS\|TO-218VAR TRIAC\|400V V(DRM)\|10A I(T)RMS\|TO-8 RF inductor, ceramic core, 5% tol, SMT, RoHS TRIAC\|400V V(DRM)\|25A I(T)RMS\|FBASE-R TRIAC\|600V V(DRM)\|25A I(T)RMS\|FBASE-R TRIAC\|500V V(DRM)\|25A I(T)RMS\|FBASE-R TRIAC\|200V V(DRM)\|25A I(T)RMS\|FBASE-R TRIAC\|600V V(DRM)\|25A I(T)RMS\|TO-220 TRIAC\|400V V(DRM)\|25A I(T)RMS\|TO-220 TRIAC\|400V V(DRM)\|15A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|15A I(T)RMS\|TO-220 TRIAC\|500V V(DRM)\|8A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|25A I(T)RMS\|TO-208AA TRIAC\|400V V(DRM)\|40A I(T)RMS\|TO-208AA TRIAC\|400V V(DRM)\|40A I(T)RMS\|IST-3RT-1/4 TRIAC\|500V V(DRM)\|12A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|12A I(T)RMS\|TO-220AB TRIAC\|400V V(DRM)\|6A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|6A I(T)RMS\|TO-220 TRIAC\|700V V(DRM)\|40A I(T)RMS\|TO-218 TRIAC\|200V V(DRM)\|4A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|16A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|5A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|10A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|10A I(T)RMS\|TO-220 TRIAC\|600VV(DRM)\|8AI(T)RMS\|TO-220 TRIAC\|600VV(DRM)\|25AI(T)RMS\|FBASE-R TRIAC\|600VV(DRM)\|25AI(T)RMS\|CAN TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-39 TRIAC\|800VV(DRM)\|25AI(T)RMS\|TO-220AB THYRISTORMODULE\|TRIAC TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-220AB TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-220 TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-218 TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-218VAR TRIAC\|600VV(DRM)\|25AI(T)RMS\|PRESS-13 TRIAC\|200V V(DRM)\|25A I(T)RMS\|TO-220	Samsung Semiconductor Co., Ltd. Vishay Intertechnology, Inc. STMicroelectronics N.V. Xicon Passive Components Anpec Electronics, Corp. Littelfuse, Inc. International Rectifier, Corp. Motorola Mobility Holdings, Inc. Electronic Theatre Controls, Inc. Mitsubishi Electric, Corp. Jiangsu Changjiang Electronics Technology Co., Ltd. GTM, Corp.
BCR5FM-12LBBB0 BCR5FM-12LB-A8BB0	600V - 5A - Triac Medium Power Use	Renesas Electronics Corporation
BCR16CM-12LB-15	600V - 16A - Triac Medium Power Use	Renesas Electronics Corporation
BCR16PM-12LC-15	600V ?16A - Triac Medium Power Use	Renesas Electronics Corporation
BTA10-600B BTA10-600BW BTA10-600C BTA10-600CW BTA1	10A triac, 600V Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:22-55 10A TRIACS 10A条双向可控硅 10A triac, 800V	SGS Thomson Microelectronics ST Microelectronics 意法半导 STMicroelectronics N.V.
STK11C48-5P45 STK11C48-5P45I STK11C48-5P30I STK11C	Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:25mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:30mA Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:D-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:35mA Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:10mA NVRAM (EEPROM Based) Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A; Holding Current:50mA Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:V-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:35mA Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:6A; Gate Trigger Current Max, Igt:35mA NVRAM中（EEPROM的基础 Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA NVRAM中（EEPROM的基础	Electronic Theatre Controls, Inc.
HTX4-600	600V 4A TRIAC	SemiHow Co.,Ltd.
HTM4-600	600V 4A TRIAC	SemiHow Co.,Ltd.
HTU4-600	600V 4A TRIAC	SemiHow Co.,Ltd.
604B 1002A 1502A 602BI 1502BI	TRIAC\|400V V(DRM)\|6A I(T)RMS\|TO-218VAR TRIAC\|400V V(DRM)\|15A I(T)RMS\|TO-218VAR SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating TRIAC\|400V V(DRM)\|10A I(T)RMS\|TO-218VAR 可控硅\| 400V五（DRM）的\| 10A条口（T）的有效值\|18VAR	Rochester Electronics, LLC

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BCR3LM-12RBB00 suply voltase IC	BCR3LM-12RBB00 positive	BCR3LM-12RBB00 Hex	BCR3LM-12RBB00 corp	BCR3LM-12RBB00 filetype:pdf
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