| PART |
Description |
Maker |
| MA4E2508MSP-T MADS-002508-1112HT MA4E2508L-1112 MA |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE CASE 1112, 2 PIN
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
|
NXP Semiconductors N.V.
M/A-COM Technology Solutions, Inc.
|
| PMEG1030EJ PMEG1030EH |
PMEG1030EJ; 10 V, 3 A very low Vf MEGA Schottky barrier rectifier in SOD323F package
10V, 3 A ULTRA LOW V-f MEGA SCHOTTKY BARRIER RECTIFIERS
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| 1PS66SB63 1PS79SB63 |
5 V, 20 mA low C_d Schottky barrier diodes
5 V, 20 mA low Cd Schottky barrier diodes SILICON, MIXER DIODE
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| 10FWJ2CZ47M |
SCHOTTKY BARRIER RECTIFIER STACK(LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE)
|
TOSHIBA[Toshiba Semiconductor]
|
| SR240L |
LOW VF SCHOTTKY BARRIER RECTIFIER
LOW VF SCHOTTKY BARRIER RECTIFIERS
|
Jinan Jingheng (Group) ...
Jinan Jing Heng Electro...
|
| 5082-2279 50822279 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| NTSA4100 |
Schottky Rectif
|
ON Semiconductor
|
| KDR322 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
Schottky Barrier Diode
|
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
|
| MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
