| PART |
Description |
Maker |
| MIE-514H4 514H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-534H4 534H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| VSMY2850G |
High Speed Infrared Emitting Diodes
|
Vishay Siliconix
|
| VSMF9700-GS18 VSMF9700-GS08 |
High Speed Infrared Emitting Diode, 890 nm
2.4 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| TSHF5210 |
High Speed Infrared Emitting Diode in T-13/4 Package
|
VISAY[Vishay Siliconix]
|
| TSHF5410 |
High Speed Infrared Emitting Diode in T-1 3/4 Package
|
VISAY[Vishay Siliconix]
|
| TSHF5200 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| TSHA5503 TSHA550 TSHA5500 TSHA5501 TSHA5502 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| TSFF551009 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSMF3710 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Intertechnology,Inc.
|
| VSMY2850G VSMY2850RG |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| TSMF3710-GS08 TSMF3710-GS18 TSMF3710 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
