| PART |
Description |
Maker |
| MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| HSDL-5420031 HSDL-4420031 HSDL-4400011 HSDL-442001 |
High-Performance IR Emitter in Subminiature SMT Package, Z Bend, Tape & Reel 1.78 mm, 1 ELEMENT, INFRARED LED, 875 nm
High-Performance IR Emitter in Subminiature SMT Package, Gullwing, Tape & Reel 1.78 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
Avago Technologies Ltd.
Lite-On Technology, Corp.
|
| MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS
|
ON Semiconductor
|
| SFH4257 |
High Power Infrared Emitter (850 nm)
|
OSRAM GmbH
|
| OD-148-C |
HIGH-POWER GaAlAs IR EMITTER CHIPS
|
OptoDiode Corp
|
| CMDA31RGB15D13L |
Power LED on Star PCB 1 Watt - Full Color Emitter (Red, Green, Blue)
|
List of Unclassifed Manufacturers
|
| BCP54-10 BCP56-10 BCP56 |
NPN Medium Power Transistor
High collector current 1.3 W power dissipation. emitter-base voltage VEBO 5 V
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| MTE9460MT |
Peak Emission Wavelength: 950nm
High Power Infrared Emitter
|
Marktech Corporate
|
| MTE9460MC |
Peak Emission Wavelength: 950nm
High Power Infrared Emitter
|
Marktech Corporate
|
| ASDL-4860-C22 |
High Power Infrared Emitter (850nm) in Surface Mount Package
|
AVAGO TECHNOLOGIES LIMITED
|
| LXHL-BB01 LXHL-BD01 LXHL-BD03 LXHL-BE01 LXHL-BH03 |
power light source LUXEON? Emitter
power light source LUXEON垄莽 Emitter
power light source LUXEON㈢ Emitter
|
Lumileds Lighting Company
|
