| PART |
Description |
Maker |
| STF28N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STF24N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| SSF8N60 |
Extremely high dv/dt capability
|
Silikron Semiconductor ...
|
| STW65N65DM2AG |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| FDG312P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| CZT2000 |
NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| CES2312 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| SI2301 |
High dense cell design for extremely low RDS(ON)
|
MAKO SEMICONDUCTOR CO.,...
|
| CES2310 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CMPTA96 |
SURFACE MOUNT PNP SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
