| PART |
Description |
Maker |
| AGR18045E |
45 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| AGR18090E AGR18090EF AGR18090EU |
90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| AWB7128 AWB7128P8 |
2.545 GHz through 2.69 GHz Small-Cell Power Amplifier Module
|
ANADIGICS, Inc
|
| AWB7123 AWB7123HM41P7 AWB7123HM41P9 |
1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module
|
Skyworks Solutions Inc.
|
| AWB7127 |
2.11 GHz through 2.17 GHz Small-Cell Power Amplifier Module
|
Skyworks Solutions Inc.
|
| SFH487P Q62703-Q517 |
GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MF1302T-1R8 MF1501T-1R5 MF1304T-6R8 MF1303T-100 MF |
Axial Molded Choke
0.5-2.5 GHz Ultralinear Mixer w/LO Buffer
8.5 - 11 GHz 6-bit Phase Shifter
Low Noise Amp, SB
Gain Block
X-band Discrete Power pHEMT
Ku-band Discrete Power pHEMT
18mm HFET
24mm HFET
Cell-Band CDMA PA Module; 1-Bit
Cell-Band PA Module; 1-Bit
|
ECM Electronics Limited.
|
| SI1913EDH SI1913EDH08 |
880 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Dual P-Channel 20-V (D-S) MOSFET
|
Vishay Siliconix
|
| TC0249A |
SAW Resonator 368.805 MHz SMD 3.8X3.8 mm
|
TAI-SAW TECHNOLOGY CO., LTD.
|
