| PART |
Description |
Maker |
| HYS64D3202 HYS64D16000GDL-6-C HYS64D32020HDL-6-C H |
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank; Available 2Q04
DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank; Available 2Q04
DDR SDRAM Modules - 256MB (32Mx64) PC2700 2-bank; Available 2Q04
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| HYMD132645BL8-H HYMD132645BL8-M HYMD132645BL8-L HY |
SDRAM|DDR|32MX64|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 32MX64 |的CMOS |内存| 184PIN |塑料
32Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 | 2.5V的| /升| x16 | DDR SDRAM内存- 256MB的无缓冲DIMM
|
SUSUMU Co., Ltd.
|
| M368L3313DTL-CB0 M368L3313DTL-CB3 M368L3313DTL-CA2 |
256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)
|
Samsung semiconductor
|
| NT256D64S88A0G NT256D64S88A0G-7K NT256D64S88A0G-75 |
256Mb: 32Mx64 unbuffered DDR SDRAM module based 32x8 SDRAM
184pin One Bank Unbuffered DDR SDRAM MODULE 一位银行无缓冲184pin DDR SDRAM内存模块
|
NANYA
ETC
Electronic Theatre Controls, Inc.
|
| WED3DG6435V75AD1 WED3DG6435V7AD1 WED3DG6435V10AD1 |
256MB - 32Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3EG6433S335BD4 W3EG6433S202AD4 W3EG6433S202BD4 W3 |
256MB - 32Mx64 DDR SDRAM UNBUFFERED, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| HYMD132645BL8J-J HYMD116G725BL8-M HYMD116G725BL8-L |
32Mx64|2.5V|J|x16|DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
|
Hynix Semiconductor
|
| HYS64T64000GU-3.7-A HYS64T64000GU-5-A HYS64T128020 |
DDR2 SDRAM Modules - 512MB (64Mx64) PC2 4300 4-4-4 1Bank; available 2Q/04
DDR2 SDRAM Modules - 512MB (64Mx64) PC2 3200 3-3-3 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx64) PC2 4300 4-4-4 2Bank; available 2Q/04
DDR2 SDRAM Modules - 256MB (32Mx64) PC2 4300 4-4-4 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx72) PC2 4300 4-4-4; 2Bank; available 2Q/04
DDR2 SDRAM Modules - 512MB (64Mx72) PC2 4300 4-4-4 1Bank; available 2Q/04
DDR2 SDRAM Modules - 256MB (32Mx64) PC2 3200 3-3-3 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx64) PC2 3200 3-3-3 2Bank; available 2Q/04
DDR2 SDRAM Modules - 512MB (64Mx72) PC2 3200 3-3-3 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx72) PC2 3200 3-3-3 2Bank; available 2Q/04
|
Infineon
|
| M470L3224DT0 M470L3224DT0-CA0 M470L3224DT0-CA2 M47 |
256MB DDR SDRAM MODULE
|
Samsung semiconductor
|
| KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M366S3323DTS M366S3323DTS-C1H M366S3323DTS-C1L M36 |
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
|
Samsung semiconductor
Samsung Electronic
|
