| PART |
Description |
Maker |
| ISL9R1560G2 ISL9R1560S3S ISL9R1560P2 ISL9R1560S2 I |
15A, 600V StealthDiode 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262
15A, 600V Stealth Diode
15A/ 600V Stealth Diode
15A, 600V Stealth⑩ Diode
15A, 600V Stealth Single Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)
Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A)
CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）\u003d 1.2ohm，身份证\u003d 6.2A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| WDP8S60H |
8A, 600V Ultrafast Single Diode
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
| WDP8S60P |
8A, 600V Ultrafast Single Diode
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
| WDP10S60 |
10A,600V Ultrafast Single Diode
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
| PHMB600A6 NIHONINTERELECTRONICSCORP-PHMB600A6 |
IGBT MODULE Single 600A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| IRFDC20 |
600V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier
|
| LPS1T60R2KWN6BF3Z LPS1T20R1KGN1AF1U LPS1T20R1KGN1A |
BARRIER TERMINAL BLOCK RoHS Compliant: Yes
Power Distribution Block, 2 Pole, 600V RoHS Compliant: Yes
CAP 4700PF 50V CERAMIC MONO 10%
NEOZED TYPE,400V,16A
CAP 47000PF 50V CERAMIC MONO 20%
CAP .33UF 50V CERAMIC MONO 10%
RES POWER FLANGE MT 100 OHM 10W
New 2.0 WtB Wafer Assy RA 2Ckt
LinCMOS(TM) Precision Dual Operational Amplifier 8-SOIC 0 to 70
LPS Series POWR-SWITCH 脂多糖系列POWR开
RECTIFIER FAST-RECOVERY SINGLE 1A 600V 30A-ifsm 1.3V-vf 250ns 5uA-ir DO-41 5K/AMMO 脂多糖系列POWR开
8-Pin SOIC Single-Channel High Speed Transistor Output Optocoupler; Package: SOIC-W; No of Pins: 8; Container: Tape & Reel 脂多糖系列POWR开
RECTIFIER FAST-RECOVERY SINGLE 1A 600V 30A-ifsm 1.3V-vf 250ns 5uA-ir DO-41 1K/BULK 脂多糖系列POWR开
RECTIFIER FAST-RECOVERY SINGLE 1.5A 600V 50A-ifsm 1.2V-vf 250ns 5uA-ir DO-41 1K/BULK 脂多糖系列POWR开
RECTIFIER FAST-RECOVERY SINGLE 2A 100V 50A-ifsm 1.2V-vf 150ns 5uA-ir DO-15 4K/REEL-13 脂多糖系列POWR开
RECTIFIER FAST-RECOVERY SINGLE 1.5A 100V 50A-ifsm 1.2V-vf 150ns 5uA-ir DO-15 1K/BULK 脂多糖系列POWR开
8-Pin SOIC Single-Channel High Speed Transistor Output Optocoupler; Package: SOIC-W; No of Pins: 8; Container: Box 脂多糖系列POWR开
RECTIFIER FAST-RECOVERY SINGLE 2A 100V 80A-ifsm 1.3V-vf 150ns 5uA-ir DO-15 4K/REEL-13 脂多糖系列POWR开
RECTIFIER FAST-RECOVERY SINGLE 1A 1000V 30A-ifsm 1.3V-vf 500ns 5uA-ir SMA 5K/REEL-13 脂多糖系列POWR开
LPS Series POWR-SWITCH
|
LITTELFUSE[Littelfuse]
Littelfuse, Inc.
|
| MG200H1AL2 MG200H1FL1A |
V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module
(DISCRETE/OPTO)
|
Toshiba Semiconductor
|
