| PART |
Description |
Maker |
| CFY30 Q62703-F97 |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| CGD1042L |
1 GHz, 23 dB gain GaAs low current power doubler
|
NXP Semiconductors
|
| TGA3504-SM TGA3504-SM-15 |
2 to 30 GHz GaAs Wideband Gain Block
|
TriQuint Semiconductor
|
| CGY1043 |
1 GHz - 23 dB gain GaAs push-pull amplifier
|
NXP Semiconductors
|
| CGD1040HI |
1 GHz, 20 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HMC313 |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
Hittite Microwave Corporation
|
| HMC313 |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK/ DC - 6.0 GHz
|
Hittite Microwave Corporation
|
| HMC742LP5E HMC742LP509 HMC742LP5-09 |
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 70 MHz - 4 GHz
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 70 MHz - 4 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
