| PART |
Description |
Maker |
| OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 10MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五（巴西）总裁| 500mA的一（c）|
|
APEM SA
|
| ZXT849KTC ZXT849K |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
30V NPN LOW SATURATION TRANSISTOR IN D-PAK
|
Diodes
ZETEX[Zetex Semiconductors]
|
| 2SD2402 2SD2402EX 2SD2402EZ 2SD2402EY |
NPN epitaxial type silicon transistor
TRANSISTOR,BJT,NPN,30V V(BR)CEO,5A I(C),TO-243
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 5A I(C) | TO-243
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 2SD2402数据表|数据表[04/2002]
|
nec
Dialight PLC
|
| RSS-093.3 RSS050P03 RSS100N03 RSS130N03 RSS065N03 |
Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:25-20
Switching (30V / 5.0A)
Switching (30V / 10A)
Switching (30V / 13A)
Switching (30V / 6.5A)
Switching (30V / 9A)
ECONOLINE - DC/DC - CONVERTER ECONOLINE -直流/直流-转炉
|
RECOM Power Inc.
Rohm
RECOM Electronic GmbH
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| NSS30201MR6T1G |
30V, 3A, Low VCE(sat) NPN Transistor(30V, 3A, 低VCE(sat) NPN晶体 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
30 V, 3 A, Low VCE(sat) NPN Transistor
|
ONSEMI[ON Semiconductor]
|
| FQPF45N03L |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 29A I(D) | TO-220F 晶体管| MOSFET的| N沟道| 30V的五（巴西）直|9A条（丁）|20F
30V LOGIC N-Channel MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| M63803GP |
(M63803xx) 7-UNIT 300mA TRANSISTOR ARRAY
|
Mitsubishi Electric
|
| M63804GP |
(M63804xx) 7-Unit 300mA Transistor Array
|
Mitsubishi Electric Corporation
|
| M63814P |
(M63814xx) 7-UNIT 300mA TRANSISTOR ARRAY
|
Mitsubishi Electric
|
| M63812P |
(M63812xx) 7-UNIT 300mA TRANSISTOR ARRAY
|
Mitsubishi Electric
|
