| PART |
Description |
Maker |
| MPS6724RLRAG |
One Watt Darlington Transistors NPN Silicon 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Rectron Semiconductor
|
| NTE5061A NTE5062A NTE5063A NTE5064A NTE5065A NTE50 |
Zener diode, 1 watt, -5% tolerance. Nominal zener voltage Vz = 68V. Zener test current Izt = 3.7mA.
Zener Diode, 1 Watt ±5% Tolerance
Zener Diode, 1 Watt 【5% Tolerance
Zener Diode 1 Watt 5% Tolerance
Zener Diode, 1 Watt 5% Tolerance
Zener Diode / 1 Watt 5% Tolerance
surface mount silicon Zener diodes 硅表面贴装齐纳二极管
Zener Diode, 1 Watt % Tolerance
10 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
NTE[NTE Electronics]
Mitsubishi Electric, Corp.
NTE Electronics, Inc.
|
| P4KE11 P4KE10 P4KE100 P4KE20 P4KE27 P4KE33 P4KE180 |
GPP TRANSIENT VOLTAGE SUPPRESSOR (400 WATT PEAK POWER 1.0 WATT STEADY STATE) 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
|
RECTRON[Rectron Semiconductor]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| MPSW01AG MPSW01ARLRAG MPSW01ARLRPG MPSW01G MPSW01 |
One Watt High Current Transistors NPN Silicon
|
ON Semiconductor
|
| 2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JAN |
NPN HIGH POWER SILICON TRANSISTOR 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
NPN HIGH POWER SILICON TRANSISTOR 2 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3
From old datasheet system
(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR
NPN Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| MPSW05 ON2350 MPSW06 |
From old datasheet system
One Watt Amplifier Transistors(NPN Silicon)
|
ONSEMI[ON Semiconductor]
|
| MPSW01 MPSW01A ON2349 |
From old datasheet system
One Watt High Current Transistors(NPN Silicon)
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| BD237 ON0191 |
From old datasheet system
POWER TRANSISTORS NPN SILICON
Plastic Medium Power Silicon NPN Transistor
CASE 77-09 TO-225AA TYPE
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
| P6FMBJ P6FMBJ10 P6FMBJ100 P6FMBJ100A P6FMBJ10A P6F |
GPP TRANSIENT VOLTAGE SUPPRESSOR (600 WATT PEAK POWER 1.0 WATT STEADY STATE)
GPP TRANSIENT VOLTAGE SUPPRESSOR (600 WATT PEAK POWER 1.0 WATT STEADY STATE) 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
3" ZINC HUB 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
|
RECTRON[Rectron Semiconductor]
|
| TFMCJ65A TFMCJ90A TFMCJ TFMCJ10 TFMCJ100 TFMCJ100A |
GPP TRANSIENT VOLTAGE SUPPRESSOR (1500 WATT PEAK POWER 1.0 WATT STEADY STATE) 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
MILL 3 XD26; 16/10 24VDC 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
|
RECTRON[Rectron Semiconductor]
http://
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