| PART |
Description |
Maker |
| BUK9628-100A BUK9528-100A NXPSEMICONDUCTORS-BUK962 |
TrenchMOS transistor Logic level FET 49 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TrenchMOS(tm) transistor Logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BUK7540-100A BUK7540-100A_1 |
TrenchMOS transistor Standard level FET
TrenchMOS TM transistor Standard level FET
From old datasheet system
TrenchMOS(tm) transistor Standard level FET
|
Philips Semiconductors
|
| BUK95150-55A BUK96150-55A |
TrenchMOS(tm) transistor Logic level FET
TrenchMOS transistor standard level FET
TrenchMOS TM transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
|
| BUK9635-100A BUK9635-100A_1 |
TrenchMOS? transistor Logic level FET
From old datasheet system
TrenchMOS transistor Logic level FET
TrenchMOS(tm) transistor Logic level FET
|
NXP Semiconductors
Philips Semiconductors
|
| MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTV6N100E MTV6N100E_D ON2675 MTV6N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTD6N10E ON2512 MTD6N10E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| PHB11N03LT PHB_PHD11N03LT_1 PHD11N03LT |
N-channel TrenchMOS transistor Logic level FET
From old datasheet system
N-channel TrenchMOS TM transistor Logic level FET
|
PHILIPS[Philips Semiconductors]
|
| IRFL9014 IRFL9014PBF |
TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN, FET General Purpose Power
TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power
|
Vishay Siliconix
|
