| PART |
Description |
Maker |
| MMZ09312B MMZ09312B12 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
| MMZ09312BT1 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor
|
| MMG3009NT1 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MMG3001NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMG3001NT108 MMG3001NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor... Freescale Semiconductor, Inc
|
| MMG3002NT1 MMG3002NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMG3004NT1 MMG3004NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMG3015NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMG3014NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MT3S111TU |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|
| BFP740F |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
|
Infineon
|
| BC847BS09 |
NPN GENERAL PURPOSE DUAL TRANSIS
|
Pan Jit International Inc.
|