| PART |
Description |
Maker |
| MTP10N10EL MTP10N10ELG |
Power MOSFET 10 Amps, 100 Volts, Logic Level; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220
|
ON Semiconductor
|
| SFF120-28Q |
9.2 AMPS 100 VOLTS 0.35S QUAD N-CHANNEL POWER MOSFET 9.2 A, 100 V, 0.35 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Solid State Devices, Inc.
|
| MTB40N10E-D |
Power MOSFET 40 Amps, 100 Volts N-Channel D2PAK
|
ON Semiconductor
|
| SFF120-28Q |
9.2 AMPS 100 VOLTS 0.35S QUAD N-CHANNEL POWER MOSFET
|
SSDI[Solid States Devices, Inc]
|
| NTB13N10-D |
Power MOSFET 13 Amps, 100 Volts N-Channel Enhancement Mode D 2 PAK
|
ON Semiconductor
|
| MTP10N10EL-D |
Power MOSFET 10 Amps, 100 Volts, Logic Level N-Channel TO-220
|
ON Semiconductor
|
| FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
STMicroelectronics N.V.
MICROSEMI CORP
|
| CRSH1-4 CRSH1-10 CRSH1-6 CRSH1-8 CRSH1-2 CRSH1-5 |
SCHOTTKY BARRIER RECTIFIER 1.0 AMPS, 20 THRU 100 VOLTS 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| PSMN9R5-100PS |
N-channel 100 V 9.6 m standard level MOSFET in T0220 89 A, 100 V, 0.0096 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
| IRFR9120NPBF IRFU9120NPBF IRFR9120NTR IRFR9120NTRL |
6.6 A, 100 V, 0.48 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA
6.6 A, 100 V, 0.48 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 0.48Ω , ID = -6.6A )
HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 0.48ヘ , ID = -6.6A )
ULTRA LOW ON RESISTANCE
|
International Rectifier
|
| SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03 |
100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.7mOhm, 100 A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3mOhm, 100A, LL
|
INFINEON[Infineon Technologies AG]
|
|
