| PART |
Description |
Maker |
| Q6004L4V Q6008L5V Q6015L5V Q6004L3V Q6010L5V Q5008 |
TRIAC|600V V(DRM)|4A I(T)RMS|TO-220AB
TRIAC|600V V(DRM)|8A I(T)RMS|TO-220AB
TRIAC|600V V(DRM)|15A I(T)RMS|TO-220AB
TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB
TRIAC|500V V(DRM)|8A I(T)RMS|TO-220AB 可控硅| 500V五（DRM）的| 8A条口（T）的有效值| TO - 220AB现有
TRIAC|800V V(DRM)|8A I(T)RMS|TO-220AB 可控硅| 800V的五（DRM）的| 8A条口T）的有效值| TO - 220AB现有
TRIAC|400V V(DRM)|4A I(T)RMS|TO-220AB 可控硅| 400V五（DRM）的| 4A条口（T）的有效值| TO - 220AB现有
|
Teridian Semiconductor, Corp.
Littelfuse, Inc.
|
| BTA10-800AW BTA10-200AW BTA10-400AW BTA10-700AW BT |
TRIAC|800V V(DRM)|10A I(T)RMS|TO-220
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220
TRIAC|400V V(DRM)|10A I(T)RMS|TO-220
TRIAC|700V V(DRM)|10A I(T)RMS|TO-220
Transient Voltage Suppressor Diodes 可控硅| 600V的五（DRM）的| 10A条口（T）的有效值|20
|
Volex PLC
|
| TW5N04FZ TW5N04FZ3 TW5N04FZ1 TW7N04FZ2 TW7N08FZ2 T |
TRIAC|400V V(DRM)|5A I(T)RMS|TO-220
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
TRIAC|800V V(DRM)|8A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 8A条口（T）的有效值|20
TRIAC|800V V(DRM)|12A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 12A条口（T）的有效值|20
TRIAC|500V V(DRM)|25A I(T)RMS|TO-103VARM6 可控硅| 500V五（DRM）的| 25A条口（T）的有效值|03VARM6
|
DB Lectro, Inc.
Intersil, Corp.
|
| 604B 1002A 1502A 602BI 1502BI |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|15A I(T)RMS|TO-218VAR
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating
TRIAC|400V V(DRM)|10A I(T)RMS|TO-218VAR 可控硅| 400V五（DRM）的| 10A条口（T）的有效值|18VAR
|
Rochester Electronics, LLC
|
| Z0409MF/1AA2 Z0402MF/1AA2 Z0405MF/0AA2 Z0405MF/1AA |
TRIAC|600V V(DRM)|1A I(T)RMS|TO-202VAR
IC 2.5V SDRAM 256M (16M X 16) 7.5NS BGA-60
TRIAC|700V V(DRM)|1A I(T)RMS|TO-202VAR 可控硅| 700V的五（DRM）的| 1A条口（T）的有效值|02VAR
IC PSRAM 16MB 48-VFBGA 可控硅| 800V的五（DRM）的| 1A条口（T）的有效值|02VAR
TRIAC|800V V(DRM)|1A I(T)RMS|TO-202VAR 可控硅| 800V的五（DRM）的| 1A条口（T）的有效值|02VAR
|
Cooper Bussmann, Inc.
STMicroelectronics N.V.
|
| BTA204S-800B BTA204S-800C BTA204S-500C BTA204S-500 |
TRIAC|800V V(DRM)|4A I(T)RMS|SOT-428
TRIAC|600V V(DRM)|4A I(T)RMS|SOT-428
TRIAC|500V V(DRM)|4A I(T)RMS|SOT-428 可控硅| 500V五（DRM）的| 4A条口T）的有效值|采用SOT - 428
|
Microchip Technology, Inc.
|
| TW7N06FZ2 TW5N06FZ TW5N06FZ3 |
TRIAC|600V V(DRM)|8A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 8A条口（T）的有效值|20
TRIAC|600V V(DRM)|5A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 5A条口（T）的有效值|20
|
Glenair, Inc.
|
| SSG25C100Y |
TRIAC|1KV V(DRM)|25A I(T)RMS|FBASE-R-HW30 可控硅| 1KV交五（DRM）的| 25A条口T）的有效值| FBASE受体- HW30
|
Won-Top Electronics Co., Ltd.
|
| CQ89NS CQ89DS CQ89MS CQ89BS |
2.0 AMP TRIAC 400 THRU 800 VOLTS
TRIAC|200V V(DRM)|2A I(T)RMS|SOT-89 可控硅| 200伏五（DRM）的|甲口（T）的有效值|采用SOT - 89
|
Central Semiconductor C...
CENTRAL[Central Semiconductor Corp]
Infineon Technologies AG
|
| CQ89N CQ89D CQ89M CQ89B |
2.0 AMP TRIAC 400 THRU 800 VOLTS
TRIAC|200V V(DRM)|1A I(T)RMS|SOT-89 可控硅| 200伏五（DRM）的| 1A条口T）的有效值|采用SOT - 89
|
Central Semiconductor C...
CENTRAL[Central Semiconductor Corp]
Central Semiconductor Corp.
Teridian Semiconductor, Corp.
|
| PT110 PT006 PT210 PT225 PT125 PT215 PT610 PT106-66 |
30V Single N-Channel HEXFET Power MOSFET in a D2Pak package; A IRL8113S with Standard Packaging
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7205 with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF3305 with Lead Free Packaging
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB4321PBF with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF1405ZS with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7473 with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a D2Pak package; Similar to IRF540ZS with Lead Free Packaging
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF9Z24N with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU8203 with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFZ34NS with Standard Packaging
TRIAC|600V V(DRM)|6A I(T)RMS|TO-66
TRIAC|50V V(DRM)|25A I(T)RMS|TO-208VAR1/2
TRIAC|100V V(DRM)|2.5A I(T)RMS|TO-5
TRIAC|200V V(DRM)|15A I(T)RMS|TO-208VAR1/2
such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; Similar to IRF6644 qualified for use
such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; A IRF6644 with Standard Tape and Reel
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFS4610 with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR7811W with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRL520NS with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR120N with Lead Free Packaging
TRIAC|50V V(DRM)|6A I(T)RMS|TO-5VAR
TRIAC|100V V(DRM)|6A I(T)RMS|TO-5VAR
TRIAC|600V V(DRM)|6A I(T)RMS|TO-5VAR
TRIAC|50V V(DRM)|3A I(T)RMS|TO-208VAR1/2
TRIAC|50V V(DRM)|3A I(T)RMS|PRESS-13
TRIAC|100V V(DRM)|3A I(T)RMS|TO-208VAR1/2
AC Relay; Output Device:MOSFET; Output Voltage Max:60VAC; Load Current Max:1A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Switch Function:SPST-NO RoHS Compliant: Yes
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7490 with Lead Free Packaging 可控硅| 200伏五（DRM）的| 6A条口（T）的有效值|VAR
Microelectronic Power IC HEXFET® Power MOSFET Photovoltaic Relay Single Pole, Normally Open 0-60V AC, 1.0A 可控硅| 400V五（DRM）的| 6A条口（T）的有效值|208VAR1 / 2
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFS4710 with Standard Packaging
100V 1 Form A Photo Voltaic Relay in a mod. 8-pin DIP Package
|
Microsemi, Corp.
LG, Corp.
|
