| PART |
Description |
Maker |
| TH58BYG3S0HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BYG2S0HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BYG0S3HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG1S3HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG0S3HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| M368L3223FTN-CB3LAA M368L1624FTM-CB3AA M381L6423FT |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC 184pin缓冲模块，基56Mb的F -死去64/72-bit非ECC / ECC
|
Sanken Electric Co.,Ltd.
Sanken Electric Co., Ltd.
|
| KVR533D2E4K2/1G |
1024MB 533MHz DDR2 ECC CL4 DIMM (Kit of 2) 1024MB33 ECC DDR2记忆CL4内存（包2
|
Vishay Intertechnology, Inc.
|
| KMM372F213CS KMM372F213CK KMM372F1600BK |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 1,600 × 72的DRAM内存ECC的使6Mx4KK的刷新，3.3
|
Samsung Semiconductor Co., Ltd.
|
| KMM372F3200BK3 KMM372F3280BK3 KMM372F400CK KMM372F |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
|
Samsung Electronic
Samsung semiconductor
|
| KMM372C1600BK KMM372C1600BS KMM372C1680BK KMM372C1 |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
|
Samsung Electronic
Samsung semiconductor
|
| IBM11N4845BB IBM11N4845CB |
4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 带纠错代码保护的小外形双列直插动态RAM模块) 4米72片，杀死保护ECC的上内存模块米72带纠错代码保护的小外形双列直插动态内存模块）
4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 甯????唬????ょ?灏??褰㈠?????????AM妯″?)
|
International Business Machines, Corp.
IBM Microeletronics
|
| AN4276 |
ECC management on SPC560x
|
STMicroelectronics
|
