| PART |
Description |
Maker |
| IKD04N60RFA |
Optimized Eon, Eoff and Qrr for low switching losses
|
Infineon Technologies A...
|
| AT40K-FFT AT40K05LV AT40K20 AT40K20LV AT40K40 AT40 |
AT40K-FFT [Updated 8/98. 8 Pages] Fast fourier transform Intellectual Property Core for AT40K FPGAs
From old datasheet system
5K - 50K Gate FPGA with DSP Optimized Core Cell and Distributed FreeRam.
20K Gate FPGA with DSP Optimized Core Cell and Distributed FreeRam (5V)
20K Gate FPGA with DSP Optimized Core Cell and Distributed FreeRam (3.3V)
40K Gate FPGA with DSP Optimized Core Cell and Distributed FreeRam (5V)
10K Gate FPGA with DSP Optimized Core Cell and Distributed FreeRam (5V)
10K Gate FPGA with DSP Optimized Core Cell and Distributed FreeRam (3.3V)
5K - 50K Gate FPGA with DSP Optimized Core Cell and Distributed FreeRam (3.3V)
5K Gate FPGA with DSP Optimized Core Cell and Distributed FreeRam (5V)
|
Atmel Corp
|
| SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB04N60 SGB04N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP02N60 SGP02N6007 SGD02N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IRFSL5615PBF IRFS5615PBF IRFS5615PBF-15 |
DIGITAL AUDIO MOSFET
Key Parameters Optimized for Class-D Audio
Key Parameters Optimized for Class-D Audio Amplifier Applications
|
International Rectifier
|
| SMQ-C23-02 |
90o HYBRID COUPLER OPTIMIZED BANDWIDTH 50 - 90 MHz
90ì HYBRID COUPLER OPTIMIZED BANDWIDTH 50 - 90 MHz
|
http://
SYNERGY MICROWAVE CORPORATION
|
| ISL9N327AD3ST FAIRCHILDSEMICONDUCTORCORP-ISL9N327A |
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| APT30DQ60KG |
Fast Recovery Epitaxial Diode; Package: TO-220 [K]; IO (A): 30; VR (V): 600; trr (nsec): 19; VF (V): 2; Qrr (nC): 400; 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-220
|
Microsemi, Corp.
|
| IXGA14N120B |
IGBT Optimized
|
IXYS Corporation
|
| IXGA12N120A2 |
IGBT Optimized
|
IXYS Corporation
|
