| PART |
Description |
Maker |
| BZG47_BZG47_A BZG4735 BZG4742 BZG4730 BZG4754 BZG4 |
3.9 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214
4.7 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214
From old datasheet system
Silicon Z?Diodes
|
VISHAY TELEFUNKEN
Vishay Siliconix
|
| MD90FF18J MD90U18J |
DO-214 Style Rectifiers - 1,800V
|
Voltage Multipliers Inc.
|
| 1205-69-5 |
FOR USE WITH RG-9, 9A, 9B, 214, 225 & 393/U CABLE
|
Winchester Electronics ...
|
| MSM54V12222B-25TS-K MSM54V12222B MSM54V12222B-20JS |
262,214-Word × 12-Bit Field Memory
262,214-Word 】 12-Bit Field Memory
|
OKI[OKI electronic componets]
|
| MSM5412222B-XXTS-K MSM5412222B MSM5412222B-25JS MS |
262,214-Word × 12-Bit Field Memory
262,214-Word 】 12-Bit Field Memory
|
OKI[OKI electronic componets]
|
| MS81V04166A-XXTB MS81V04160A MS81V04160A-20TB MS81 |
Dual FIFO (262,214 Words 】 8 Bits) 】 2
|
OKI[OKI electronic componets]
|
| MS8104166 |
Dual FIFO (262,214 Words × 8 Bits) × 2
Dual FIFO (262,214 Words 】 8 Bits) 】 2
|
OKI[OKI electronic componets]
|
| MSM518222A-XXGS-K MSM518222A-30GS-K MSM518222A-40G |
262,214-Word X 8-Bit Field Memory 262214字8位字段记
|
OKI SEMICONDUCTOR CO., LTD.
|
| HYS64T128020EML HYS64T128020EML-3.7-B HYS64T128020 |
214-Pin Unbuffered DDR2 SDRAM MicroDIMM Modules Low Power
|
Qimonda AG
|
| HYS64T64020HM-3.7-A HYS64T64020HM-3S-A HYS64T64020 |
214-Pin Micro-DIMM-DDR2-SDRAM Modules 64M X 64 DDR DRAM MODULE, 0.45 ns, DMA214
214-Pin Micro-DIMM-DDR2-SDRAM Modules 64M X 64 DDR DRAM MODULE, 0.5 ns, DMA214
|
Qimonda AG
|
| BDP951 BDP953 BDP955 BDP95 |
General Purpose Transistors - NPN Silicon AF Power Transistor for AF driver and output stages
Transient Surge Protection Thyristor; Leaded Process Compatible:Yes; Package/Case:DO-214; Mounting Type:Through Hole; Polarization:Unipolar; Power
|
Infineon Technologies AG
|
