| PART |
Description |
Maker |
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| BD201 BD202 BD203 |
Epitaxial-Base, Silicon
|
New Jersey Semi-Conduct...
|
| BDX2012 |
SILICON TRANSISTORS EPITAXIAL BASE
|
Comset Semiconductor
|
| BDX20 |
PNP SILICON TRANSISTORS EPITAXIAL BASE
|
Comset Semiconductor
|
| BDX18N |
PNP SILICON TRANSISTORS, EPITAXIAL BASE
|
New Jersey Semi-Conductor P...
|
| 2N6246 2N6248 2N6247 2N6469 |
SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| BD944 |
(BD944 - BD948) Silicon Epitaxial Base Power Transistors
|
Magna
|
| BDS15SMD BDS14 BDS14SMD BDS13SMD BDS15 BDS13 |
SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BDS19SMD BDS18SMD BDS19 BDS18 |
SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
|
SemeLAB
SEME-LAB[Seme LAB]
|
| 2SC1622A |
NPN Silicon Epitaxial Transistor
High DC current gain.Collector-base voltage VCBO 120 V
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| TIP142 TIP140 TIP141 TIP142TU |
Monolithic Construction With Built In Base- Emitter Shunt Resistors
NPN Epitaxial Silicon Darlington Transistor
|
FAIRCHILD SEMICONDUCTOR CORP
http://
FAIRCHILD[Fairchild Semiconductor]
|
| BDS12 BDS12SMD BDS10SMD BDS11SMD BDS11 BDS10 |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AB
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
