| PART |
Description |
Maker |
| 1PS76SB17 |
Low forward volatge Guard ring protected Very small plastic SMD package.
|
TY Semiconductor Co., L...
|
| 1N5177W |
Low Forward Voltage Drop Guard Ring Constuction for Transient Protection
|
TY Semiconductor Co., Ltd
|
| MBRX120LF |
Low Forward Volatge Drop Schottky Barrier Diodes
|
Micro Commercial Components
|
| BAT64-07 BAT6407 Q62702-A964 |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SD0530WT |
Guard ring construction for transient Protection
|
Bruckewell Technology L...
|
| KD103AW KD103BW |
Guard ring construction for transient protection
|
TY Semiconductor Co., Ltd
|
| MBR1550CT |
Guard ring die constuction for transient protection
|
Kersemi Electronic Co., Ltd...
|
| 1N5819-T 1N5817-B 1N5817-T 1N5818-B 1N5819-B 1N581 |
Through-Hole Schottky Rectifiers
Guard Ring Die Construction for Transient Protection
|
Diodes Incorporated
|
| BAT54AW BAT54SW BAT54CW |
Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a very small SOT323
|
NXP Semiconductors
|
| CLY32-00 CLY32-05 CLY32-10 CLY32 |
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 伊雷尔C波段砷化镓功率场效应
HiRel C-Band GaAs Power-MESFET
|
INFINEON[Infineon Technologies AG]
|
