| PART |
Description |
Maker |
| STH10NC60FI STW10NC60 STH10NC60 |
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?┥I MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?II MOSFET
N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMeshII MOSFET
N-CHANNEL Power MOSFET
N-CHANNEL Power MOS MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET N沟道600V 0.6ohm - 10A TO-247/ISOWATT218 PowerMesh第二MOSFET的⑩
N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| STGP10NB60SDFP |
20 A, 600 V, N-CHANNEL IGBT, TO-220AB
N-CHANNEL 10A - 600V - TO-220FP PowerMesh⑩ IGBT
N-CHANNEL 10A - 600V - TO-220FP PowerMesh IGBT
N-CHANNEL 10A 600V TO-220FP POWERMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| 10A02-T 10A06-T 10A01-15 10A05-T 10A03-T 10A04-T 1 |
Standard Rectifiers
10A RECTIFIER 10 A, 800 V, SILICON, RECTIFIER DIODE
10A RECTIFIER 10 A, 100 V, SILICON, RECTIFIER DIODE
|
Diodes Incorporated
Diodes, Inc.
|
| STW10NB60 6241 |
N-CHANNEL Power MOSFET
N - CHANNEL 600V - 0.69 - 10A - TO-247 PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| FSS913A0R4 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A |
10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 10 A, 100 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| STS10NF30L |
N - CHANNEL 30V - 0.011ohm - 10A SO-8 STripFET POWER MOSFET -通道30V 0.011ohm - 10A条的SO - 8 STripFET功率MOSFET
N-CHANNEL PowerMESH MOSFET
N - CHANNEL 30V - 0.011ohm - 10A SO-8 STripFET POWER MOSFET
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1 |
10A 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 17.5 A, 400 V, N-CHANNEL IGBT, TO-220AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| MB108-BP MB101-BP |
RECTIFIER BRIDGE 10A 800V BR-6 10 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
RECTIFIER BRIDGE 10A 100V BR-6 10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
|
Micro Commercial Components, Corp.
|
| MJ15011 MJ15011-D MJ15012 |
Power 10A 250V Discrete NPN
Complementary Silicon Power Transistors
Power 10A 250V Discrete PNP
|
ON Semiconductor
|
| IRF740S 6111 |
N-Channel 400V-0.48Ω-10A- D2PAK PowerMESHTM MOSFET(N沟道MOSFET) N沟道400V -0.48Ω- 10A条，采用D2PAK PowerMESHTM MOSFET的（不适用沟道MOSFET的）
N-Channel 400V-0.48Ω-10A- D2PAK PowerMESHTM MOSFET(N沟道MOSFET)
From old datasheet system
N - CHANNEL 400V - 0.48 - 10 A -D 2 PAK PowerMESH TM MOSFET
N - CHANNEL 400V - 0.48 ohm - 10 A - D2PAK PowerMESH] MOSFET
N - CHANNEL 400V - 0.48 Ohm -10 A -D 2 PAK PowerMESH MOSFET
|
STMicroelectronics N.V.
意法半导
SGS Thomson Microelectronics
|
| MRB31-3.5-V |
Standard : UL - IEC 300V - 250V 10A - 10A
|
Eldeco Srl
|
