| PART |
Description |
Maker |
| IPD12N03L IPU12N03L |
DDM43W2S
OptiMOS Power MOSFET, 30V, TO251, RDSon = 10.4mOhm, 30A, LL
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LL
OptiMOS Buck converter series
|
INFINEON[Infineon Technologies AG]
http://
|
| SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAk, RDSon = 5.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 6.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|
| SPB70N10L SPI70N10L SPP70N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=16mOhm, 70A, LL
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=16mOhm, 70A, LL
|
INFINEON[Infineon Technologies AG]
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| SPP10N10L |
Power MOSFET, 100V, TO-220, RDSon=154mOhm, 10A, LL
|
Infineon
|
| MP5073 |
5.5V, 2A Low RDSON Load Switch With Programmable Current Limit
|
Monolithic Power System...
|
| ADP194ACBZ-R7 ADP194CB-EVALZ |
Logic Controlled, High-Side Power Switch Low RDSON of 80 mΩ at 1.8 V
|
Analog Devices
|
| SPD07N20 |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.4 Ohm, 7.0A, NL
|
Infineon
|
| SPB21N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=85mOhm, 21A, NL
|
Infineon
|
| SPU11N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, I-PAK, RDSon=179mOhm, 11A, NL
|
Infineon
|
| SPI47N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, NL
|
Infineon
|
|
